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A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Ohki, S ; Funato, H ; Suhara, M ; Okumura, T ; Wernersson, Lars-Erik LU and Seifert, Werner LU (2002) In Applied Surface Science 190(1-4). p.288-293
Abstract
A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
heterointerface, strain barrier, band offset, GaAsP/GaAs, triple-barrier resonant tunneling diodes, thermionic emission
in
Applied Surface Science
volume
190
issue
1-4
pages
288 - 293
publisher
Elsevier
external identifiers
  • wos:000176520700053
  • scopus:0037042007
ISSN
1873-5584
DOI
10.1016/S0169-4332(01)00870-4
language
English
LU publication?
yes
id
25c2e901-8769-44fb-b765-e6367ae9f002 (old id 334628)
date added to LUP
2016-04-01 12:07:29
date last changed
2022-01-26 23:08:34
@article{25c2e901-8769-44fb-b765-e6367ae9f002,
  abstract     = {{A method for evaluating a band offset of a heterojunction is proposed by measuring temperature dependence of current-voltage (I-V) characteristics in triple-barrier resonant tunneling diodes (TBRTDs). The method was applied for investigating a conduction band offset by using GaAs0.25P0.75/GaAs TBRTDs with thin strain heterobarriers grown by MOCVD and DeltaE(c) was estimated as 200-240 meV. In the strain-barrier TBRTDs, negative differential resistance was observed below 100 K. (C) 2002 Elsevier Science B.V. All rights reserved.}},
  author       = {{Ohki, S and Funato, H and Suhara, M and Okumura, T and Wernersson, Lars-Erik and Seifert, Werner}},
  issn         = {{1873-5584}},
  keywords     = {{heterointerface; strain barrier; band offset; GaAsP/GaAs; triple-barrier resonant tunneling diodes; thermionic emission}},
  language     = {{eng}},
  number       = {{1-4}},
  pages        = {{288--293}},
  publisher    = {{Elsevier}},
  series       = {{Applied Surface Science}},
  title        = {{A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes}},
  url          = {{http://dx.doi.org/10.1016/S0169-4332(01)00870-4}},
  doi          = {{10.1016/S0169-4332(01)00870-4}},
  volume       = {{190}},
  year         = {{2002}},
}