Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
(2002) In Applied Physics Letters 80(24). p.4546-4548- Abstract
- We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/335608
- author
- Ohlsson, Jonas LU ; Malm, Jan-Olle LU ; Gustafsson, Anders LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 80
- issue
- 24
- pages
- 4546 - 4548
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000176128100022
- scopus:79955999172
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1485311
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 74f970bf-1bed-437f-b162-4babec069b84 (old id 335608)
- date added to LUP
- 2016-04-01 12:18:25
- date last changed
- 2023-09-02 03:02:03
@article{74f970bf-1bed-437f-b162-4babec069b84, abstract = {{We demonstrate a method for growth of GaP nanocrystals on Si(001), developed to avoid defects related to antiphase domain boundaries in the proximity of the GaP/Si interface. The technique is based on sub-mum-sized selective-area epitaxy of GaP on atomically flat Si in masked openings. We have used field-emission scanning electron microscopy together with transmission electron microscopy to illustrate the method with examples of monocrystalline GaP nanocrystals. The optical properties of the nanocrystals were investigated by low-temperature cathodoluminescence.}}, author = {{Ohlsson, Jonas and Malm, Jan-Olle and Gustafsson, Anders and Samuelson, Lars}}, issn = {{0003-6951}}, language = {{eng}}, number = {{24}}, pages = {{4546--4548}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings}}, url = {{http://dx.doi.org/10.1063/1.1485311}}, doi = {{10.1063/1.1485311}}, volume = {{80}}, year = {{2002}}, }