Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))
(2002) 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors 20(1). p.226-229- Abstract
- Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/342781
- author
- Håkanson, Ulf LU ; Ohlsson, Jonas LU ; Montelius, Lars LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)
- host publication
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- volume
- 20
- issue
- 1
- pages
- 226 - 229
- publisher
- American Vacuum Society
- conference name
- 6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
- conference dates
- 2001-04-22 - 2001-04-26
- external identifiers
-
- wos:000173985500040
- scopus:0036118696
- ISSN
- 1071-1023
- 1520-8567
- DOI
- 10.1116/1.1432968
- language
- English
- LU publication?
- yes
- id
- 7c1d7d7c-662d-41c5-882e-8237deee5430 (old id 342781)
- date added to LUP
- 2016-04-01 12:15:16
- date last changed
- 2024-04-23 09:23:38
@inproceedings{7c1d7d7c-662d-41c5-882e-8237deee5430, abstract = {{Using scanning electron microscopy guidance, atomically resolved scanning tunneling microscopy investigations inside openings formed during the decomposition of a thick SiO2 film on a Si(111) surface have been performed. We report, for the first time, the presence of Ni atoms inside self-formed openings. The SiO2 decomposition as a function of annealing temperature and time was studied. By comparing self-formed and lithographically designed openings in the SiO2 layer we have shown that Ni contamination of the SiO2/Si(111) has a profound effect on the formation of self-induced lateral oxide openings. (C) 2002 American Vacuum Society.}}, author = {{Håkanson, Ulf and Ohlsson, Jonas and Montelius, Lars and Samuelson, Lars}}, booktitle = {{JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}}, issn = {{1071-1023}}, keywords = {{Ultrahigh vacuum scanning tunneling microscopy (UHVSTM)}}, language = {{eng}}, number = {{1}}, pages = {{226--229}}, publisher = {{American Vacuum Society}}, title = {{Ultrahigh vacuum scanning probe investigations of metal induced void formation in SiO2/Si(111))}}, url = {{http://dx.doi.org/10.1116/1.1432968}}, doi = {{10.1116/1.1432968}}, volume = {{20}}, year = {{2002}}, }