Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
(2002) In Applied Physics Letters 80(3). p.494-496- Abstract
- We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/345952
- author
- Håkanson, Ulf LU ; Johansson, Mikael LU ; Persson, Jonas LU ; Johansson, Jonas LU ; Pistol, Mats-Erik LU ; Montelius, Lars LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 80
- issue
- 3
- pages
- 494 - 496
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000173278400052
- scopus:79956020368
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1435796
- language
- English
- LU publication?
- yes
- id
- 66284a46-0184-401c-ba2e-1a4e18de0d5f (old id 345952)
- date added to LUP
- 2016-04-01 11:39:41
- date last changed
- 2022-03-31 11:02:27
@article{66284a46-0184-401c-ba2e-1a4e18de0d5f, abstract = {{We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. (C) 2002 American Institute of Physics.}}, author = {{Håkanson, Ulf and Johansson, Mikael and Persson, Jonas and Johansson, Jonas and Pistol, Mats-Erik and Montelius, Lars and Samuelson, Lars}}, issn = {{0003-6951}}, language = {{eng}}, number = {{3}}, pages = {{494--496}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence}}, url = {{http://dx.doi.org/10.1063/1.1435796}}, doi = {{10.1063/1.1435796}}, volume = {{80}}, year = {{2002}}, }