A novel device principle for nanoelectronics
(2002) In Materials Science and Engineering C: Materials for Biological Applications 19(1-2). p.417-420- Abstract
- We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also... (More)
- We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/346069
- author
- Xu, Hongqi LU ; Shorubalko, Ivan LU ; Maximov, Ivan LU ; Seifert, Werner LU ; Omling, Pär LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- 300 K, parabolic behavior, Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP, voltage, novel electrical characteristic, symmetric three-terminal device, broken device symmetry, 2DEG, semiconductor QW, push-pull fashion, symmetric TBJ device, three-terminal ballistic junctions, nanoelectronics, room temperature electrical property
- in
- Materials Science and Engineering C: Materials for Biological Applications
- volume
- 19
- issue
- 1-2
- pages
- 417 - 420
- publisher
- Elsevier
- external identifiers
-
- wos:000173080700082
- scopus:0037005972
- ISSN
- 0928-4931
- DOI
- 10.1016/S0928-4931(01)00435-0
- language
- English
- LU publication?
- yes
- id
- 1dd72d0b-49e2-493a-818b-9310f52b7645 (old id 346069)
- date added to LUP
- 2016-04-01 16:34:17
- date last changed
- 2022-02-27 22:07:13
@article{1dd72d0b-49e2-493a-818b-9310f52b7645,
abstract = {{We report on the results of our recent theoretical and experimental investigations of a novel, room temperature electrical property of three-terminal ballistic junctions (TBJs). For a symmetric TBJ device, it is found that when finite voltages V-1 and V-r are applied in push-pull fashion, with V-1 = V and V-r = - V. to the left and right branches, the voltage output V-c from the central branch will always be negative. This property is in strong contrast to a symmetric three-terminal device made from conventional diffusive conductors, for which Ohm's law predicts a constant zero output of V-c for all V-1 - V-c.This novel characteristic appears even when the device symmetry is broken, provided that V is greater than the threshold. It is also shown that the TBJ devices show a good parabolic behavior for V-c vs. V in a large range of voltages V.}},
author = {{Xu, Hongqi and Shorubalko, Ivan and Maximov, Ivan and Seifert, Werner and Omling, Pär and Samuelson, Lars}},
issn = {{0928-4931}},
keywords = {{300 K; parabolic behavior; Ga<sub>0.25</sub>In<sub>0.75</sub>As-InP; voltage; novel electrical characteristic; symmetric three-terminal device; broken device symmetry; 2DEG; semiconductor QW; push-pull fashion; symmetric TBJ device; three-terminal ballistic junctions; nanoelectronics; room temperature electrical property}},
language = {{eng}},
number = {{1-2}},
pages = {{417--420}},
publisher = {{Elsevier}},
series = {{Materials Science and Engineering C: Materials for Biological Applications}},
title = {{A novel device principle for nanoelectronics}},
url = {{http://dx.doi.org/10.1016/S0928-4931(01)00435-0}},
doi = {{10.1016/S0928-4931(01)00435-0}},
volume = {{19}},
year = {{2002}},
}