Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.
(2014) In Nano Letters 14(2). p.749-753- Abstract
- InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4292259
- author
- Heurlin, Magnus LU ; Hultin, Olof LU ; Storm, Kristian LU ; Lindgren, David LU ; Borgström, Magnus LU and Samuelson, Lars LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 14
- issue
- 2
- pages
- 749 - 753
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:24382163
- wos:000331343900054
- scopus:84894168304
- ISSN
- 1530-6992
- DOI
- 10.1021/nl404039d
- language
- English
- LU publication?
- yes
- id
- 5873ec6e-5ea8-48df-a8e1-7055b33d097d (old id 4292259)
- date added to LUP
- 2016-04-01 10:37:03
- date last changed
- 2024-01-06 20:57:45
@article{5873ec6e-5ea8-48df-a8e1-7055b33d097d, abstract = {{InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.}}, author = {{Heurlin, Magnus and Hultin, Olof and Storm, Kristian and Lindgren, David and Borgström, Magnus and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{2}}, pages = {{749--753}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.}}, url = {{http://dx.doi.org/10.1021/nl404039d}}, doi = {{10.1021/nl404039d}}, volume = {{14}}, year = {{2014}}, }