Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn) As epitaxial layers
(2014) In Applied Physics Reviews 115(1).- Abstract
- The effect of outdiffusion of Mn interstitials from (Ga,Mn) As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the... (More)
- The effect of outdiffusion of Mn interstitials from (Ga,Mn) As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn) As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn) As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn) As, in agreement with the Zener model for ferromagnetic semiconductors. (C) 2014 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4319590
- author
- Yastrubchak, O. ; Wosinski, T. ; Gluba, L. ; Andrearczyk, T. ; Domagala, J. Z. ; Zuk, J. and Sadowski, Janusz LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 115
- issue
- 1
- article number
- 012009
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000329456300009
- scopus:84892189589
- ISSN
- 1931-9401
- DOI
- 10.1063/1.4838036
- language
- English
- LU publication?
- yes
- id
- c775dc6c-69be-4ea3-a9f4-ae31b1e6636b (old id 4319590)
- date added to LUP
- 2016-04-01 10:56:55
- date last changed
- 2022-03-31 14:53:40
@article{c775dc6c-69be-4ea3-a9f4-ae31b1e6636b,
abstract = {{The effect of outdiffusion of Mn interstitials from (Ga,Mn) As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and superconducting quantum interference device magnetometry, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results demonstrating a decrease in the band-gap-transition energy in the as-grown (Ga,Mn) As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the GaAs valence band. Whereas an increase in the band-gap-transition energy caused by the annealing treatment of the (Ga,Mn) As layers is interpreted as a result of annealing-induced enhancement of the free-hole concentration and the Fermi level location within the valence band. The experimental results are consistent with the valence-band origin of itinerant holes mediating ferromagnetic ordering in (Ga,Mn) As, in agreement with the Zener model for ferromagnetic semiconductors. (C) 2014 AIP Publishing LLC.}},
author = {{Yastrubchak, O. and Wosinski, T. and Gluba, L. and Andrearczyk, T. and Domagala, J. Z. and Zuk, J. and Sadowski, Janusz}},
issn = {{1931-9401}},
language = {{eng}},
number = {{1}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Reviews}},
title = {{Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn) As epitaxial layers}},
url = {{http://dx.doi.org/10.1063/1.4838036}},
doi = {{10.1063/1.4838036}},
volume = {{115}},
year = {{2014}},
}