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Coexistence of Surface Electronic Confinement and Topological States in Sb4Te3

Barreto, Rafael R. ; Rodrigues-Fontenele, Guilherme ; Freitas, Luisa V.C. ; Marçal, Lucas A.B. LU ; Silva, Wendell S.e. ; Rodrigues-Junior, Gilberto ; Miquita, Douglas R. ; Ali, Khadiza LU ; Carbone, Dina LU and Mazzoni, Mario S.C. , et al. (2024) In ACS Applied Electronic Materials 6(7). p.5347-5358
Abstract

Layered materials have attracted significant attention in recent years due to the diverse electronic properties arising from different structural variations. Here, we present angle-resolved photoemission spectroscopy measurements conducted on the topological material Sb4Te3. This material consists of a composite stacking of two distinct topological materials: the three-dimensional (3D) topological insulator Sb2Te3 and the two-dimensional (2D) topological insulator Sb2. Our angle-resolved photoemission spectroscopy measurements combined with density functional theory reveal that the topological behavior exhibited by Sb2Te3 and Sb2 persists,... (More)

Layered materials have attracted significant attention in recent years due to the diverse electronic properties arising from different structural variations. Here, we present angle-resolved photoemission spectroscopy measurements conducted on the topological material Sb4Te3. This material consists of a composite stacking of two distinct topological materials: the three-dimensional (3D) topological insulator Sb2Te3 and the two-dimensional (2D) topological insulator Sb2. Our angle-resolved photoemission spectroscopy measurements combined with density functional theory reveal that the topological behavior exhibited by Sb2Te3 and Sb2 persists, characterized by nontrivial topological invariant, electronic states from the spin-orbit coupling, hexagonal warping associated with time reversal symmetry and photon-energy independence in these surface states. By comparing the results with the complete bulk and surface bands, we observe parabolic states associated with the existence of stacking faults. The photon-energy independence of this state indicates confinement along the stacking direction. In essence, we revealed the existence of topological states and confined electrons in the material Sb4Te3 using angle-resolved photoemission spectroscopy experiments.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ARPES, hexagonal warping, layered materials, quantum well, topological insulator
in
ACS Applied Electronic Materials
volume
6
issue
7
pages
12 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85198340529
ISSN
2637-6113
DOI
10.1021/acsaelm.4c00979
language
English
LU publication?
yes
id
4337a84a-f85c-4743-ada1-ade3bea87d7f
date added to LUP
2024-09-13 14:46:02
date last changed
2024-09-13 14:46:14
@article{4337a84a-f85c-4743-ada1-ade3bea87d7f,
  abstract     = {{<p>Layered materials have attracted significant attention in recent years due to the diverse electronic properties arising from different structural variations. Here, we present angle-resolved photoemission spectroscopy measurements conducted on the topological material Sb<sub>4</sub>Te<sub>3</sub>. This material consists of a composite stacking of two distinct topological materials: the three-dimensional (3D) topological insulator Sb<sub>2</sub>Te<sub>3</sub> and the two-dimensional (2D) topological insulator Sb<sub>2</sub>. Our angle-resolved photoemission spectroscopy measurements combined with density functional theory reveal that the topological behavior exhibited by Sb<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub> persists, characterized by nontrivial topological invariant, electronic states from the spin-orbit coupling, hexagonal warping associated with time reversal symmetry and photon-energy independence in these surface states. By comparing the results with the complete bulk and surface bands, we observe parabolic states associated with the existence of stacking faults. The photon-energy independence of this state indicates confinement along the stacking direction. In essence, we revealed the existence of topological states and confined electrons in the material Sb<sub>4</sub>Te<sub>3</sub> using angle-resolved photoemission spectroscopy experiments.</p>}},
  author       = {{Barreto, Rafael R. and Rodrigues-Fontenele, Guilherme and Freitas, Luisa V.C. and Marçal, Lucas A.B. and Silva, Wendell S.e. and Rodrigues-Junior, Gilberto and Miquita, Douglas R. and Ali, Khadiza and Carbone, Dina and Mazzoni, Mario S.C. and Malachias, Angelo and Magalhaes-Paniago, Rogerio}},
  issn         = {{2637-6113}},
  keywords     = {{ARPES; hexagonal warping; layered materials; quantum well; topological insulator}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{5347--5358}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Electronic Materials}},
  title        = {{Coexistence of Surface Electronic Confinement and Topological States in Sb<sub>4</sub>Te<sub>3</sub>}},
  url          = {{http://dx.doi.org/10.1021/acsaelm.4c00979}},
  doi          = {{10.1021/acsaelm.4c00979}},
  volume       = {{6}},
  year         = {{2024}},
}