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Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations

Laukkanen, P. ; Punkkinen, M. P. J. ; Lang, J. J. K. ; Sadowski, Janusz LU ; Kuzmin, M. and Kokko, K. (2014) In Journal of Electron Spectroscopy and Related Phenomena 193. p.34-38
Abstract
Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and... (More)
Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved. (Less)
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Core-level shift, Synchrotron-radiation spectroscopy, Ab initio, Surface, reconstruction, Gallium arsenide, Bismuth
in
Journal of Electron Spectroscopy and Related Phenomena
volume
193
pages
34 - 38
publisher
Elsevier
external identifiers
  • wos:000337010200006
  • scopus:84895933287
ISSN
0368-2048
DOI
10.1016/j.elspec.2014.02.008
language
English
LU publication?
yes
id
a6d30678-4b90-4cdc-b776-7b553c78b487 (old id 4552285)
date added to LUP
2016-04-01 13:52:33
date last changed
2022-01-27 21:32:50
@article{a6d30678-4b90-4cdc-b776-7b553c78b487,
  abstract     = {{Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved.}},
  author       = {{Laukkanen, P. and Punkkinen, M. P. J. and Lang, J. J. K. and Sadowski, Janusz and Kuzmin, M. and Kokko, K.}},
  issn         = {{0368-2048}},
  keywords     = {{Core-level shift; Synchrotron-radiation spectroscopy; Ab initio; Surface; reconstruction; Gallium arsenide; Bismuth}},
  language     = {{eng}},
  pages        = {{34--38}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Electron Spectroscopy and Related Phenomena}},
  title        = {{Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations}},
  url          = {{http://dx.doi.org/10.1016/j.elspec.2014.02.008}},
  doi          = {{10.1016/j.elspec.2014.02.008}},
  volume       = {{193}},
  year         = {{2014}},
}