Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
(2016) In Journal of Physics: Conference Series 712(1).- Abstract
The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a "lift-off" procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES... (More)
The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a "lift-off" procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.
(Less)
- author
- Melikhov, Y. ; Konstantynov, P. ; Domagala, J. ; Sadowski, J. LU ; Chernyshova, M. ; Wojciechowski, T ; Syryanyy, Y. and Demchenko, I. N.
- organization
- publishing date
- 2016
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physics: Conference Series
- volume
- 712
- issue
- 1
- article number
- 012114
- publisher
- IOP Publishing
- external identifiers
-
- scopus:84978733282
- ISSN
- 1742-6588
- DOI
- 10.1088/1742-6596/712/1/012114
- language
- English
- LU publication?
- yes
- id
- 56d46f39-6b20-4c3b-875a-c4cb3740351a
- date added to LUP
- 2017-02-08 13:14:58
- date last changed
- 2022-03-31 14:53:37
@article{56d46f39-6b20-4c3b-875a-c4cb3740351a,
abstract = {{<p>The redistribution of Mn atoms in Ga<sub>1-x</sub>Mn<sub>x</sub>As layer during medium-temperature annealing, 250-450 <sup>o</sup>C, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga<sub>1-x</sub>Mn<sub>x</sub>As thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a "lift-off" procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.</p>}},
author = {{Melikhov, Y. and Konstantynov, P. and Domagala, J. and Sadowski, J. and Chernyshova, M. and Wojciechowski, T and Syryanyy, Y. and Demchenko, I. N.}},
issn = {{1742-6588}},
language = {{eng}},
number = {{1}},
publisher = {{IOP Publishing}},
series = {{Journal of Physics: Conference Series}},
title = {{Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing}},
url = {{http://dx.doi.org/10.1088/1742-6596/712/1/012114}},
doi = {{10.1088/1742-6596/712/1/012114}},
volume = {{712}},
year = {{2016}},
}