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Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors

Gluschke, J.G. ; Seidl, J. ; Lyttleton, Roman LU ; Carrad, D.J. ; Cochrane, J.W. ; Lehmann, Sebastian LU ; Samuelson, Lars LU and Micholich, A.P. (2018) In Nano Letters 18(7). p.4431-4439
Abstract
We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding... (More)
We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface “self-cleaning” effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene’s well-established biocompatible properties. (Less)
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
18
issue
7
pages
4431 - 4439
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85048991238
ISSN
1530-6984
DOI
10.1021/acs.nanolett.8b01519
language
English
LU publication?
yes
id
57e9aac6-6f92-4855-9646-69f408b273c8
date added to LUP
2019-05-09 15:53:16
date last changed
2023-10-07 03:34:27
@article{57e9aac6-6f92-4855-9646-69f408b273c8,
  abstract     = {{We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of &lt;100 nm thick parylene films on III–V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 103 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface “self-cleaning” effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene’s well-established biocompatible properties.}},
  author       = {{Gluschke, J.G. and Seidl, J. and Lyttleton, Roman and Carrad, D.J. and Cochrane, J.W. and Lehmann, Sebastian and Samuelson, Lars and Micholich, A.P.}},
  issn         = {{1530-6984}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{4431--4439}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.8b01519}},
  doi          = {{10.1021/acs.nanolett.8b01519}},
  volume       = {{18}},
  year         = {{2018}},
}