Reactive magnetron sputter deposition of CNx films on Si(001) substrates : film growth, microstructure and mechanical properties
(1994) In Thin Solid Films 246(1-2). p.103-109- Abstract
- There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron... (More)
- There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron microscopy (TEM). Auger electron spectroscopy, Rutherford backscattering and nano-indentation tests. Typically the films were grown at rates of 5 nm s-1 to total thicknesses of 300 nm. Owing to an extensive re-sputtering, only low negative bias voltages (-80 (Less)
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- author
- Sjöström, H ; Ivanov, I ; Johansson, M ; Hultman, L ; Sundgren, JE ; Hainsworth, SV ; Page, TF and Wallenberg, LR LU
- organization
- publishing date
- 1994-06-15
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Thin Solid Films
- volume
- 246
- issue
- 1-2
- pages
- 7 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:0028445814
- ISSN
- 0040-6090
- DOI
- 10.1016/0040-6090(94)90738-2
- language
- English
- LU publication?
- yes
- id
- 5dced925-b168-4ad8-8558-a8eb99076c85
- date added to LUP
- 2023-10-31 15:35:25
- date last changed
- 2023-11-02 10:21:17
@article{5dced925-b168-4ad8-8558-a8eb99076c85, abstract = {{There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron microscopy (TEM). Auger electron spectroscopy, Rutherford backscattering and nano-indentation tests. Typically the films were grown at rates of 5 nm s-1 to total thicknesses of 300 nm. Owing to an extensive re-sputtering, only low negative bias voltages (-80}}, author = {{Sjöström, H and Ivanov, I and Johansson, M and Hultman, L and Sundgren, JE and Hainsworth, SV and Page, TF and Wallenberg, LR}}, issn = {{0040-6090}}, language = {{eng}}, month = {{06}}, number = {{1-2}}, pages = {{103--109}}, publisher = {{Elsevier}}, series = {{Thin Solid Films}}, title = {{Reactive magnetron sputter deposition of CNx films on Si(001) substrates : film growth, microstructure and mechanical properties}}, url = {{http://dx.doi.org/10.1016/0040-6090(94)90738-2}}, doi = {{10.1016/0040-6090(94)90738-2}}, volume = {{246}}, year = {{1994}}, }