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Reactive magnetron sputter deposition of CNx films on Si(001) substrates : film growth, microstructure and mechanical properties

Sjöström, H ; Ivanov, I ; Johansson, M ; Hultman, L ; Sundgren, JE ; Hainsworth, SV ; Page, TF and Wallenberg, LR LU (1994) In Thin Solid Films 246(1-2). p.103-109
Abstract
There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron... (More)
There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron microscopy (TEM). Auger electron spectroscopy, Rutherford backscattering and nano-indentation tests. Typically the films were grown at rates of 5 nm s-1 to total thicknesses of 300 nm. Owing to an extensive re-sputtering, only low negative bias voltages (-80 (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Thin Solid Films
volume
246
issue
1-2
pages
7 pages
publisher
Elsevier
external identifiers
  • scopus:0028445814
ISSN
0040-6090
DOI
10.1016/0040-6090(94)90738-2
language
English
LU publication?
yes
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5dced925-b168-4ad8-8558-a8eb99076c85
date added to LUP
2023-10-31 15:35:25
date last changed
2023-11-02 10:21:17
@article{5dced925-b168-4ad8-8558-a8eb99076c85,
  abstract     = {{There is currently considerable interest in producing new materials with extreme combinations of mechanical properties such as high hardnesses and moduli. One example of such a material is crystalline C3N4, which has been predicted to have a bulk modulus higher than that of diamond. In this paper we report on experiments carried out to synthesize CNx thin films. The films were grown in an unbalanced magnetron-sputtering system by reactive sputtering of C in N2 discharges. Si(001) substrates with the native oxide removed by thermal desorption and then kept at temperatures ranging from 150 to 600°C and substrate bias voltages Vs between 7.5 and -200 V were used. The films were analysed using X-ray diffraction, transmission electron microscopy (TEM). Auger electron spectroscopy, Rutherford backscattering and nano-indentation tests. Typically the films were grown at rates of 5 nm s-1 to total thicknesses of 300 nm. Owing to an extensive re-sputtering, only low negative bias voltages (-80}},
  author       = {{Sjöström, H and Ivanov, I and Johansson, M and Hultman, L and Sundgren, JE and Hainsworth, SV and Page, TF and Wallenberg, LR}},
  issn         = {{0040-6090}},
  language     = {{eng}},
  month        = {{06}},
  number       = {{1-2}},
  pages        = {{103--109}},
  publisher    = {{Elsevier}},
  series       = {{Thin Solid Films}},
  title        = {{Reactive magnetron sputter deposition of CNx films on Si(001) substrates : film growth, microstructure and mechanical properties}},
  url          = {{http://dx.doi.org/10.1016/0040-6090(94)90738-2}},
  doi          = {{10.1016/0040-6090(94)90738-2}},
  volume       = {{246}},
  year         = {{1994}},
}