Defect formation in al-doped SI(100) films grown by molecular-beam epitaxy and solid-phase epitaxy
(1989) In Institute of Physics Conference Series p.235-240- Abstract
- Aluminium doped Si layers grown either by solid phase epitaxy (SPE) or molecular beam epitaxy (MBE) have been investigated over wide ranges of Al fluxes (J(Al) = 1 x 10(10)-3 x 10(13) cm-2s-1) and growth temperatures (T(s) = 500-900-degrees-C), using RHEED, LEED and AES during growth and cross section TEM of the as-deposited layers. For MBE growth, defect free films could be grown almost in the whole interval of J(Al) and T(s). In the SPE case Al is completely incorporated in the amorphous films. Upon crystallization dislocations and stacking faults/twins, as well as small voids are formed. For all concentrations and annealing temperatures TEM shows similar defect structures.
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- author
- Radnoczi, G. ; Hasan, MA. ; Sundgren, Jan-Eric and Wallenberg, LR LU
- organization
- publishing date
- 1989
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Institute of Physics Conference Series
- issue
- 100
- pages
- 6 pages
- publisher
- IOP Publishing
- ISSN
- 0951-3248
- language
- English
- LU publication?
- yes
- id
- 5e621df9-fd59-4d21-8f43-4d77826d8494
- date added to LUP
- 2023-10-31 14:41:35
- date last changed
- 2023-11-02 10:16:45
@article{5e621df9-fd59-4d21-8f43-4d77826d8494, abstract = {{Aluminium doped Si layers grown either by solid phase epitaxy (SPE) or molecular beam epitaxy (MBE) have been investigated over wide ranges of Al fluxes (J(Al) = 1 x 10(10)-3 x 10(13) cm-2s-1) and growth temperatures (T(s) = 500-900-degrees-C), using RHEED, LEED and AES during growth and cross section TEM of the as-deposited layers. For MBE growth, defect free films could be grown almost in the whole interval of J(Al) and T(s). In the SPE case Al is completely incorporated in the amorphous films. Upon crystallization dislocations and stacking faults/twins, as well as small voids are formed. For all concentrations and annealing temperatures TEM shows similar defect structures.}}, author = {{Radnoczi, G. and Hasan, MA. and Sundgren, Jan-Eric and Wallenberg, LR}}, issn = {{0951-3248}}, language = {{eng}}, number = {{100}}, pages = {{235--240}}, publisher = {{IOP Publishing}}, series = {{Institute of Physics Conference Series}}, title = {{Defect formation in al-doped SI(100) films grown by molecular-beam epitaxy and solid-phase epitaxy}}, year = {{1989}}, }