Random telegraph noise in the photon emission from semiconductor quantum dots
(2005) 2005 European Quantum Electronics Conference p.18-18- Abstract
- This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with... (More)
- This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/616496
- author
- Pistol, Mats-Erik LU ; Panev, Nikolay LU ; Castrillo, P ; Hessman, Dan LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Evtikhiev, V ; Katznelson, A and Kotelnikov, E
- organization
- publishing date
- 2005
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- switching behaviour, nonradiative defects, InAs-GaAs-InP-GaInP, band filling, surface density, Stranski-Krastanow technique, quantum dots, photoluminescence, semiconductor quantum dots, random telegraph noise, photon emission
- host publication
- 2005 European Quantum Electronics Conference
- pages
- 18 - 18
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2005 European Quantum Electronics Conference
- conference location
- Munich, Germany
- conference dates
- 2005-06-12 - 2005-06-17
- external identifiers
-
- scopus:33847303058
- ISBN
- 0-7803-8973-5
- DOI
- 10.1109/EQEC.2005.1567191
- language
- English
- LU publication?
- yes
- id
- 132a30f4-2d89-4ae6-8441-53c6ac1ebd8c (old id 616496)
- date added to LUP
- 2016-04-04 11:30:31
- date last changed
- 2022-01-29 21:58:41
@inproceedings{132a30f4-2d89-4ae6-8441-53c6ac1ebd8c, abstract = {{This study has observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs and InP quantum dots in GaInP. The dots are grown by the Stranski-Krastanow technique with a sufficiently low surface density that individual dots easily could be investigated. The luminescence from many single quantum dots, exhibiting switching between two levels, has been spectrally resolved as a function of time. The random telegraph noise is only observed in the presence of band filling. Results show no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks that changes. The InAs quantum dots behave very similarly to InP/GaInP and InGaAs/GaAs quantum dots with respect to random telegraph noise. The similarities between the different systems argue for a common mechanism behind the blinking. Experiments are performed where the switching behaviour is changed in all the different systems supporting the idea that non-radiative defects are responsible}}, author = {{Pistol, Mats-Erik and Panev, Nikolay and Castrillo, P and Hessman, Dan and Samuelson, Lars and Seifert, Werner and Evtikhiev, V and Katznelson, A and Kotelnikov, E}}, booktitle = {{2005 European Quantum Electronics Conference}}, isbn = {{0-7803-8973-5}}, keywords = {{switching behaviour; nonradiative defects; InAs-GaAs-InP-GaInP; band filling; surface density; Stranski-Krastanow technique; quantum dots; photoluminescence; semiconductor quantum dots; random telegraph noise; photon emission}}, language = {{eng}}, pages = {{18--18}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Random telegraph noise in the photon emission from semiconductor quantum dots}}, url = {{http://dx.doi.org/10.1109/EQEC.2005.1567191}}, doi = {{10.1109/EQEC.2005.1567191}}, year = {{2005}}, }