Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

InAsP/InAs nanowire heterostructure field effect transistors

Lind, Erik LU and Wernersson, Lars-Erik LU (2006) Device Research Conference, 2006 p.173-174
Abstract
We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
nanowire heterostructure field effect transistors, InAsP-InAs
host publication
Device Research Conference
pages
173 - 174
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference, 2006
conference location
University Park, PA, United States
conference dates
2006-06-26 - 2006-06-28
ISBN
0-7803-9748-7
DOI
10.1109/DRC.2006.305171
language
English
LU publication?
yes
id
480f5cb9-89d7-4f0c-ad5c-7a243649d047 (old id 616699)
date added to LUP
2016-04-04 11:49:59
date last changed
2018-11-21 21:07:30
@inproceedings{480f5cb9-89d7-4f0c-ad5c-7a243649d047,
  abstract     = {{We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage}},
  author       = {{Lind, Erik and Wernersson, Lars-Erik}},
  booktitle    = {{Device Research Conference}},
  isbn         = {{0-7803-9748-7}},
  keywords     = {{nanowire heterostructure field effect transistors; InAsP-InAs}},
  language     = {{eng}},
  pages        = {{173--174}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{InAsP/InAs nanowire heterostructure field effect transistors}},
  url          = {{http://dx.doi.org/10.1109/DRC.2006.305171}},
  doi          = {{10.1109/DRC.2006.305171}},
  year         = {{2006}},
}