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Planar hall effect in ferromagnetic (Ga,Mn)As/GaAs superlattices

Wesela, W. ; Wosinski, T. ; Makosa, A. ; Figielski, T. ; Sadowski, Janusz LU ; Terki, F. and Charar, S. (2007) XXXVI International School on Physics of Semiconducting Compounds 112(2). p.369-373
Abstract
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ca,Mn)As/CaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magneto crystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane (100) directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
ACTA PHYSICA POLONICA A
volume
112
issue
2
pages
369 - 373
publisher
Polish Academy of Sciences
conference name
XXXVI International School on Physics of Semiconducting Compounds
conference location
Jaszowiec, Poland
conference dates
2007-06-09 - 2007-06-15
external identifiers
  • wos:000250180300040
  • scopus:35348846778
ISSN
0587-4246
language
English
LU publication?
yes
id
4e814fe2-c0ef-4952-b71b-b386292a4170 (old id 655547)
alternative location
http://przyrbwn.icm.edu.pl/APP/ABSTR/112/a112-2-40.html
date added to LUP
2016-04-01 15:57:42
date last changed
2022-03-22 07:27:24
@inproceedings{4e814fe2-c0ef-4952-b71b-b386292a4170,
  abstract     = {{The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ca,Mn)As/CaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magneto crystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane (100) directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.}},
  author       = {{Wesela, W. and Wosinski, T. and Makosa, A. and Figielski, T. and Sadowski, Janusz and Terki, F. and Charar, S.}},
  booktitle    = {{ACTA PHYSICA POLONICA A}},
  issn         = {{0587-4246}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{369--373}},
  publisher    = {{Polish Academy of Sciences}},
  title        = {{Planar hall effect in ferromagnetic (Ga,Mn)As/GaAs superlattices}},
  url          = {{http://przyrbwn.icm.edu.pl/APP/ABSTR/112/a112-2-40.html}},
  volume       = {{112}},
  year         = {{2007}},
}