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Constructing type-II CuInSe2/CuInS2 core/shell quantum dots for high-performance photoelectrochemical cells

Huang, Zheng ; Meng, Jie LU ; Huang, Fei ; Yu, Binbin ; Wang, Junfeng ; Yang, Yumin ; Ning, Jiajia ; Zheng, Kaibo LU and Tian, Jianjun (2024) In SCIENCE CHINA Materials 67(1). p.134-142
Abstract

CuInSe2 (CISe) quantum dots (QDs) have shown promising applications in photoelectrochemical (PEC) cells due to their nontoxicity, high extinction coefficient, and wide optical absorption range; however, their low PEC performance prevents their applications due to insufficient charge carrier separation and severe charge recombination. Herein, CISe/CuInS2 (CISe/CIS) core/shell structured QDs are designed and constructed to promote charge separation and diminish interface defects. Afterward, the copper vacancy (VCu) state of CISe/CIS QDs is enriched by modulating the precursor molar ratios of In/Cu. Therefore, the radiative recombination of the conduction band edge electrons with the VCu... (More)

CuInSe2 (CISe) quantum dots (QDs) have shown promising applications in photoelectrochemical (PEC) cells due to their nontoxicity, high extinction coefficient, and wide optical absorption range; however, their low PEC performance prevents their applications due to insufficient charge carrier separation and severe charge recombination. Herein, CISe/CuInS2 (CISe/CIS) core/shell structured QDs are designed and constructed to promote charge separation and diminish interface defects. Afterward, the copper vacancy (VCu) state of CISe/CIS QDs is enriched by modulating the precursor molar ratios of In/Cu. Therefore, the radiative recombination of the conduction band edge electrons with the VCu localized holes becomes dominant and prolongs the carrier lifetime compared with intrinsic band-to-band recombination, thus promoting charge separation. Consequently, the VCu-rich CISe/CIS QD-based photoanode shows a high photocurrent density of 8.0 mA cm−2, which is one of the highest values reported for CISe QD-based PEC cells. This work provides an effective approach for promoting charge carrier separation and transfer through surface or intrinsic defect mediation for PEC applications of I–III–VI semiconductor nanocrystals.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
charge separation, copper vacancy, CuInSe/CuInS core/shell quantum dots, photoelectrochemical cells, recombination
in
SCIENCE CHINA Materials
volume
67
issue
1
pages
9 pages
publisher
Science in China Press
external identifiers
  • scopus:85180944150
ISSN
2095-8226
DOI
10.1007/s40843-023-2690-3
language
English
LU publication?
yes
id
81b123f5-acf4-4f79-b382-757da0612944
date added to LUP
2024-01-31 15:18:22
date last changed
2024-01-31 15:19:49
@article{81b123f5-acf4-4f79-b382-757da0612944,
  abstract     = {{<p>CuInSe<sub>2</sub> (CISe) quantum dots (QDs) have shown promising applications in photoelectrochemical (PEC) cells due to their nontoxicity, high extinction coefficient, and wide optical absorption range; however, their low PEC performance prevents their applications due to insufficient charge carrier separation and severe charge recombination. Herein, CISe/CuInS<sub>2</sub> (CISe/CIS) core/shell structured QDs are designed and constructed to promote charge separation and diminish interface defects. Afterward, the copper vacancy (V<sub>Cu</sub>) state of CISe/CIS QDs is enriched by modulating the precursor molar ratios of In/Cu. Therefore, the radiative recombination of the conduction band edge electrons with the V<sub>Cu</sub> localized holes becomes dominant and prolongs the carrier lifetime compared with intrinsic band-to-band recombination, thus promoting charge separation. Consequently, the V<sub>Cu</sub>-rich CISe/CIS QD-based photoanode shows a high photocurrent density of 8.0 mA cm<sup>−2</sup>, which is one of the highest values reported for CISe QD-based PEC cells. This work provides an effective approach for promoting charge carrier separation and transfer through surface or intrinsic defect mediation for PEC applications of I–III–VI semiconductor nanocrystals.</p>}},
  author       = {{Huang, Zheng and Meng, Jie and Huang, Fei and Yu, Binbin and Wang, Junfeng and Yang, Yumin and Ning, Jiajia and Zheng, Kaibo and Tian, Jianjun}},
  issn         = {{2095-8226}},
  keywords     = {{charge separation; copper vacancy; CuInSe/CuInS core/shell quantum dots; photoelectrochemical cells; recombination}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{134--142}},
  publisher    = {{Science in China Press}},
  series       = {{SCIENCE CHINA Materials}},
  title        = {{Constructing type-II CuInSe<sub>2</sub>/CuInS<sub>2</sub> core/shell quantum dots for high-performance photoelectrochemical cells}},
  url          = {{http://dx.doi.org/10.1007/s40843-023-2690-3}},
  doi          = {{10.1007/s40843-023-2690-3}},
  volume       = {{67}},
  year         = {{2024}},
}