Strain state in semiconductor quantum dots on surfaces : a comparison of electron microscopy and finite element calculations
(1998) In Surface Science 406(1-3). p.48-56- Abstract
- The strain distribution in InP quantum dots, coherently grown on a GaInP substrate, was determined by image analysis of high-resolution electron microscopy images. Image simulations were used to verify the obtained results. The measured strain values were compared with values obtained from finite element calculations, using the dot shape determined by electron microscopy. The measured and calculated strain values are in good agreement, supporting the use of finite element calculations for strain determination in quantum dots.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8bc83262-5dfc-426f-9cc2-ca039b4d9317
- author
- Carlsson, A LU ; Wallenberg, LR LU ; Persson, C and Seifert, W LU
- organization
- publishing date
- 1998-05-31
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- electron microscopy, epitaxy, gallium phosphide, growth, indium phosphide, self-assembly, semiconductor-semiconductor thin film structures, single crystal epitaxy
- in
- Surface Science
- volume
- 406
- issue
- 1-3
- pages
- 9 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:0032073029
- ISSN
- 0039-6028
- DOI
- 10.1016/S0039-6028(98)00084-3
- language
- English
- LU publication?
- yes
- id
- 8bc83262-5dfc-426f-9cc2-ca039b4d9317
- date added to LUP
- 2023-10-31 16:09:19
- date last changed
- 2023-11-02 14:45:16
@article{8bc83262-5dfc-426f-9cc2-ca039b4d9317, abstract = {{The strain distribution in InP quantum dots, coherently grown on a GaInP substrate, was determined by image analysis of high-resolution electron microscopy images. Image simulations were used to verify the obtained results. The measured strain values were compared with values obtained from finite element calculations, using the dot shape determined by electron microscopy. The measured and calculated strain values are in good agreement, supporting the use of finite element calculations for strain determination in quantum dots.}}, author = {{Carlsson, A and Wallenberg, LR and Persson, C and Seifert, W}}, issn = {{0039-6028}}, keywords = {{electron microscopy; epitaxy; gallium phosphide; growth; indium phosphide; self-assembly; semiconductor-semiconductor thin film structures; single crystal epitaxy}}, language = {{eng}}, month = {{05}}, number = {{1-3}}, pages = {{48--56}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{Strain state in semiconductor quantum dots on surfaces : a comparison of electron microscopy and finite element calculations}}, url = {{http://dx.doi.org/10.1016/S0039-6028(98)00084-3}}, doi = {{10.1016/S0039-6028(98)00084-3}}, volume = {{406}}, year = {{1998}}, }