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Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

Zeng, Hui ; Wang, Weimin LU orcid ; Ivanov, Ivan G. ; Darakchieva, Vanya LU and Sun, Jianwu (2024) In Applied Physics Letters 125(16).
Abstract

The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co3O4/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co3O4/3C-SiC heterojunction. Our results reveal that the Co3O4/3C-SiC p-n heterojunction exhibits a type-II band alignment, with a conduction band offset of 0.75 eV and a valence band offset of 0.96 eV. These experimental findings are crucial for the design and development of 3C-SiC devices for electronic and optoelectronic applications.

Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
125
issue
16
article number
162102
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85208273804
ISSN
0003-6951
DOI
10.1063/5.0226900
language
English
LU publication?
yes
additional info
Publisher Copyright: © 2024 Author(s).
id
8d2c2852-f51d-45ab-9cf9-bf72510760fc
date added to LUP
2024-12-18 09:57:31
date last changed
2025-06-23 12:06:35
@article{8d2c2852-f51d-45ab-9cf9-bf72510760fc,
  abstract     = {{<p>The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co<sub>3</sub>O<sub>4</sub>/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co<sub>3</sub>O<sub>4</sub>/3C-SiC heterojunction. Our results reveal that the Co<sub>3</sub>O<sub>4</sub>/3C-SiC p-n heterojunction exhibits a type-II band alignment, with a conduction band offset of 0.75 eV and a valence band offset of 0.96 eV. These experimental findings are crucial for the design and development of 3C-SiC devices for electronic and optoelectronic applications.</p>}},
  author       = {{Zeng, Hui and Wang, Weimin and Ivanov, Ivan G. and Darakchieva, Vanya and Sun, Jianwu}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{10}},
  number       = {{16}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Determination of the conduction and valence band offsets at the Co<sub>3</sub>O<sub>4</sub>/3C-SiC p-n heterojunction}},
  url          = {{http://dx.doi.org/10.1063/5.0226900}},
  doi          = {{10.1063/5.0226900}},
  volume       = {{125}},
  year         = {{2024}},
}