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High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

Khan, Sabbir Ahmed ; Suyatin, Dmitry LU orcid ; Sundqvist, Jonas LU ; Graczyk, Mariusz LU ; Junige, Marcel ; Kauppinen, Christoffer ; Kvennefors, Anders LU ; Huffman, Maria LU orcid and Maximov, Ivan LU orcid (2018) In ACS Applied Nano Materials p.2476-2482
Abstract
ABSTRACT: Nanoimprint lithography (NIL) has the potential for low-cost and
high-throughput nanoscale fabrication. However, the NIL quality and resolution are
usually limited by the shape and size of the nanoimprint stamp features. Atomic
layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch
control for features of all length scales, down to the atomic scale, and for all feature
geometries, which is required for good quality and high-resolution nanoimprint
stamp fabrication. Here, we present an ALE process for nanoscale pattern transfer
and high-resolution nanoimprint stamp preparation. This ALE process is based on
chemical adsorption of a monoatomic layer of dichloride (Cl2) on... (More)
ABSTRACT: Nanoimprint lithography (NIL) has the potential for low-cost and
high-throughput nanoscale fabrication. However, the NIL quality and resolution are
usually limited by the shape and size of the nanoimprint stamp features. Atomic
layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch
control for features of all length scales, down to the atomic scale, and for all feature
geometries, which is required for good quality and high-resolution nanoimprint
stamp fabrication. Here, we present an ALE process for nanoscale pattern transfer
and high-resolution nanoimprint stamp preparation. This ALE process is based on
chemical adsorption of a monoatomic layer of dichloride (Cl2) on the silicon
surface, followed by the removal of a monolayer of Cl2-modified silicon by argon
bombardment. The nanopatterns of different geometries, loadings, and pitches
were fabricated by electron beam lithography on a silicon wafer, and ALE was
subsequently performed for pattern transfer using a resist as an etch mask. The
post-ALE patterns allowed us to study the different effects and limitations of the
process, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution. (Less)
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Atomic Layer Etching
in
ACS Applied Nano Materials
pages
6 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85056213269
ISSN
2574-0970
DOI
10.1021/acsanm.8b00509
language
English
LU publication?
yes
id
93190014-1636-46cc-92fe-6e20bd84857a
date added to LUP
2019-03-18 12:02:41
date last changed
2024-10-01 18:38:51
@article{93190014-1636-46cc-92fe-6e20bd84857a,
  abstract     = {{ABSTRACT: Nanoimprint lithography (NIL) has the potential for low-cost and<br/>high-throughput nanoscale fabrication. However, the NIL quality and resolution are<br/>usually limited by the shape and size of the nanoimprint stamp features. Atomic<br/>layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch<br/>control for features of all length scales, down to the atomic scale, and for all feature<br/>geometries, which is required for good quality and high-resolution nanoimprint<br/>stamp fabrication. Here, we present an ALE process for nanoscale pattern transfer<br/>and high-resolution nanoimprint stamp preparation. This ALE process is based on<br/>chemical adsorption of a monoatomic layer of dichloride (Cl2) on the silicon<br/>surface, followed by the removal of a monolayer of Cl2-modified silicon by argon<br/>bombardment. The nanopatterns of different geometries, loadings, and pitches<br/>were fabricated by electron beam lithography on a silicon wafer, and ALE was<br/>subsequently performed for pattern transfer using a resist as an etch mask. The<br/>post-ALE patterns allowed us to study the different effects and limitations of the<br/>process, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution.}},
  author       = {{Khan, Sabbir Ahmed and Suyatin, Dmitry and Sundqvist, Jonas and Graczyk, Mariusz and Junige, Marcel and Kauppinen, Christoffer and Kvennefors, Anders and Huffman, Maria and Maximov, Ivan}},
  issn         = {{2574-0970}},
  keywords     = {{Atomic Layer Etching}},
  language     = {{eng}},
  month        = {{05}},
  pages        = {{2476--2482}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Nano Materials}},
  title        = {{High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching}},
  url          = {{http://dx.doi.org/10.1021/acsanm.8b00509}},
  doi          = {{10.1021/acsanm.8b00509}},
  year         = {{2018}},
}