Hot-carrier separation in heterostructure nanowires observed by electron-beam induced current
Fast, Jonatan LU ; Barrigon, Enrique LU ; Kumar, Mukesh LU ; Chen, Yang LU ; Samuelson, Lars LU ; Borgström, Magnus LU
; Gustafsson, Anders
LU
; Limpert, Steven
LU
; Burke, Adam
LU
and Linke, Heiner
LU
(2020)
In Nanotechnology
31(39).
- Abstract
- The separation of hot carriers in semiconductors is of interest for applications such asthermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowiresoffer several potential advantages for effective hot-carrier separation such as: a high degree ofcontrol and flexibility in heterostructure-based band engineering, increased hot-carriertemperatures compared to bulk, and a geometry well suited for local control of light absorption.Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electricpower under global illumination, with an open-circuit voltage exceeding the Shockley-Queisserlimit. To understand this behaviour in more detail, it is necessary to establish control over theprecise... (More)
- The separation of hot carriers in semiconductors is of interest for applications such asthermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowiresoffer several potential advantages for effective hot-carrier separation such as: a high degree ofcontrol and flexibility in heterostructure-based band engineering, increased hot-carriertemperatures compared to bulk, and a geometry well suited for local control of light absorption.Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electricpower under global illumination, with an open-circuit voltage exceeding the Shockley-Queisserlimit. To understand this behaviour in more detail, it is necessary to establish control over theprecise location of electron-hole pair-generation in the nanowire. In this work we performelectron-beam induced current measurements with high spatial resolution, and demonstrate therole of the InP barrier in extracting energetic electrons.We interprete the results in terms ofhot-carrier separation, and extract estimates of the hot carriers’ mean free path. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/c98e67e4-e6e7-4418-8b20-bc282bbb7b2f
- author
- Fast, Jonatan
LU
; Barrigon, Enrique
LU
; Kumar, Mukesh
LU
; Chen, Yang
LU
; Samuelson, Lars
LU
; Borgström, Magnus
LU
; Gustafsson, Anders
LU
; Limpert, Steven
LU
; Burke, Adam
LU
and Linke, Heiner
LU
- organization
- publishing date
- 2020-07-10
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 31
- issue
- 39
- article number
- 394004
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85088276683
- pmid:32526708
- ISSN
- 1361-6528
- DOI
- 10.1088/1361-6528/ab9bd7
- language
- English
- LU publication?
- yes
- id
- c98e67e4-e6e7-4418-8b20-bc282bbb7b2f
- date added to LUP
- 2020-12-18 12:06:27
- date last changed
- 2025-10-14 11:18:06
@article{c98e67e4-e6e7-4418-8b20-bc282bbb7b2f,
abstract = {{The separation of hot carriers in semiconductors is of interest for applications such asthermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowiresoffer several potential advantages for effective hot-carrier separation such as: a high degree ofcontrol and flexibility in heterostructure-based band engineering, increased hot-carriertemperatures compared to bulk, and a geometry well suited for local control of light absorption.Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electricpower under global illumination, with an open-circuit voltage exceeding the Shockley-Queisserlimit. To understand this behaviour in more detail, it is necessary to establish control over theprecise location of electron-hole pair-generation in the nanowire. In this work we performelectron-beam induced current measurements with high spatial resolution, and demonstrate therole of the InP barrier in extracting energetic electrons.We interprete the results in terms ofhot-carrier separation, and extract estimates of the hot carriers’ mean free path.}},
author = {{Fast, Jonatan and Barrigon, Enrique and Kumar, Mukesh and Chen, Yang and Samuelson, Lars and Borgström, Magnus and Gustafsson, Anders and Limpert, Steven and Burke, Adam and Linke, Heiner}},
issn = {{1361-6528}},
language = {{eng}},
month = {{07}},
number = {{39}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Hot-carrier separation in heterostructure nanowires observed by electron-beam induced current}},
url = {{http://dx.doi.org/10.1088/1361-6528/ab9bd7}},
doi = {{10.1088/1361-6528/ab9bd7}},
volume = {{31}},
year = {{2020}},
}