Anders Gustafsson
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- 2014
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Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
(
- Contribution to journal › Article
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Mark
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
(
- Contribution to journal › Article
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Mark
GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence
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- Contribution to journal › Article
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Mark
Observation of Type II Recombination in Single Wurtzite-Zincblende GaAs Heterojunction Nanowire
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
Correlated Luminescence and Hall Measurements on Single Nanowires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article
- 2013
-
Mark
Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates
(
- Contribution to journal › Article
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Mark
Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.
(
- Contribution to journal › Article