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- 2020
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Mark
Hot-carrier separation in heterostructure nanowires observed by electron-beam induced current
(
- Contribution to journal › Article
- 2018
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Mark
Self-assembled InN quantum dots on side facets of GaN nanowires
(
- Contribution to journal › Article
- 2017
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Mark
Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors
(
- Contribution to journal › Article
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Mark
Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light- emitting diodes
(
- Contribution to journal › Article
- 2015
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Mark
Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
(
- Contribution to journal › Article
- 2014
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Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
(
- Contribution to journal › Article
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Mark
Correlated Luminescence and Hall Measurements on Single Nanowires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
InN Quantum Dots on GaN Nanowires Grown by MOVPE
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
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Mark
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
InN quantum dots on GaN nanowires grown by MOVPE
2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424(
- Contribution to journal › Article