Sebastian Lehmann
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- 2013
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Mark
Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas
(
- Contribution to journal › Article
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Mark
A general approach for sharp crystal phase switching in InAs, GaAs, InP and GaP nanowires using only group V flow
2013) 7th Nanowire growth workshop, 2013(
- Contribution to conference › Abstract
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Mark
III/V Nanodrähte
2013) In DGKK(
- Contribution to journal › Article
- 2012
-
Mark
Electronic properties of grain boundaries in Cu(In,Ga)Se-2 thin films with various Ga-contents
(
- Contribution to journal › Article
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Mark
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
(
- Contribution to journal › Article
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Mark
Growth of InAs/InP core-shell nanowires with various pure crystal structures.
(
- Contribution to journal › Article
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Mark
High Quality GaAs WZ-ZB Nanowire Heterostructures
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
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Mark
Atomic Surface Structure and Electronic Properties of Semiconductor Nanowires Studied by Scanning Tunneling Microscopy and Spectroscopy
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
Polytypic InAs Nanowire Studies Using Scanning Tunneling Microscopy
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Tetrahedral chalcopyrite quantum dots for solar-cell applications
(
- Contribution to journal › Article