Amplifier Design Using Vertical InAs Nanowire MOSFETs
(2016) In IEEE Transactions on Electron Devices 63(6). p.2353-2359- Abstract
In this paper, an amplifier design using ballistic vertical InAs nanowire (NW) transistors is investigated, focusing on a basic common-source amplifier. The maximum power gain at 90 GHz is evaluated for different NW transistor architectures together with the power dissipation. The linearity of the amplifier is evaluated by estimating the IIP3 and 1-dB compression points. Furthermore, the impact of the parasitic capacitances and resistances is quantified and it is demonstrated that the gain may be increased by a cascode design. It is concluded that a power gain exceeding 20 dB at 90 GHz may be achieved by a common-source amplifier based on an InAs NW transistor architecture. A power consumption below 1 mW is possible, while... (More)
In this paper, an amplifier design using ballistic vertical InAs nanowire (NW) transistors is investigated, focusing on a basic common-source amplifier. The maximum power gain at 90 GHz is evaluated for different NW transistor architectures together with the power dissipation. The linearity of the amplifier is evaluated by estimating the IIP3 and 1-dB compression points. Furthermore, the impact of the parasitic capacitances and resistances is quantified and it is demonstrated that the gain may be increased by a cascode design. It is concluded that a power gain exceeding 20 dB at 90 GHz may be achieved by a common-source amplifier based on an InAs NW transistor architecture. A power consumption below 1 mW is possible, while still maintaining a high power gain. Furthermore, IIP3 exceeding 10 dBm is predicted. The combination of these qualities makes the NW transistor architecture an attractive prospect for low-power amplifiers at millimeter wave frequencies.
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- author
- Jansson, Kristofer LU ; Lind, Erik LU and Wernersson, Lars Erik LU
- organization
- publishing date
- 2016-06-01
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Amplifier, InAs, nanowires (NWs), transistor
- in
- IEEE Transactions on Electron Devices
- volume
- 63
- issue
- 6
- article number
- 7465782
- pages
- 7 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000378592800019
- scopus:84966551166
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2016.2556283
- language
- English
- LU publication?
- yes
- id
- 00419810-08e5-4bef-b829-05625f7f121e
- date added to LUP
- 2016-06-28 12:37:32
- date last changed
- 2024-08-15 02:51:51
@article{00419810-08e5-4bef-b829-05625f7f121e, abstract = {{<p>In this paper, an amplifier design using ballistic vertical InAs nanowire (NW) transistors is investigated, focusing on a basic common-source amplifier. The maximum power gain at 90 GHz is evaluated for different NW transistor architectures together with the power dissipation. The linearity of the amplifier is evaluated by estimating the IIP<sub>3</sub> and 1-dB compression points. Furthermore, the impact of the parasitic capacitances and resistances is quantified and it is demonstrated that the gain may be increased by a cascode design. It is concluded that a power gain exceeding 20 dB at 90 GHz may be achieved by a common-source amplifier based on an InAs NW transistor architecture. A power consumption below 1 mW is possible, while still maintaining a high power gain. Furthermore, IIP<sub>3</sub> exceeding 10 dBm is predicted. The combination of these qualities makes the NW transistor architecture an attractive prospect for low-power amplifiers at millimeter wave frequencies.</p>}}, author = {{Jansson, Kristofer and Lind, Erik and Wernersson, Lars Erik}}, issn = {{0018-9383}}, keywords = {{Amplifier; InAs; nanowires (NWs); transistor}}, language = {{eng}}, month = {{06}}, number = {{6}}, pages = {{2353--2359}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{Amplifier Design Using Vertical InAs Nanowire MOSFETs}}, url = {{http://dx.doi.org/10.1109/TED.2016.2556283}}, doi = {{10.1109/TED.2016.2556283}}, volume = {{63}}, year = {{2016}}, }