Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams
(2013) In Journal of Applied Crystallography 46(4). p.887-892- Abstract
Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice... (More)
Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.
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- author
- Bussone, Genziana ; Schott, Rüdiger ; Biermanns, Andreas ; Davydok, Anton ; Reuter, Dirk ; Carbone, Gerardina LU ; Schülli, Tobias U. ; Wieck, Andreas D. and Pietsch, Ullrich
- publishing date
- 2013-08
- type
- Contribution to journal
- publication status
- published
- keywords
- GaAs, grazing-incidence X-ray diffraction, growth, semiconductor nanowires
- in
- Journal of Applied Crystallography
- volume
- 46
- issue
- 4
- pages
- 6 pages
- publisher
- International Union of Crystallography
- external identifiers
-
- scopus:84880547953
- ISSN
- 0021-8898
- DOI
- 10.1107/S0021889813004226
- language
- English
- LU publication?
- no
- id
- 042ef87a-5962-4ba6-b66b-ca9fe8fe2cb9
- date added to LUP
- 2021-12-15 12:01:29
- date last changed
- 2022-02-02 02:08:44
@article{042ef87a-5962-4ba6-b66b-ca9fe8fe2cb9,
abstract = {{<p>Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.</p>}},
author = {{Bussone, Genziana and Schott, Rüdiger and Biermanns, Andreas and Davydok, Anton and Reuter, Dirk and Carbone, Gerardina and Schülli, Tobias U. and Wieck, Andreas D. and Pietsch, Ullrich}},
issn = {{0021-8898}},
keywords = {{GaAs; grazing-incidence X-ray diffraction; growth; semiconductor nanowires}},
language = {{eng}},
number = {{4}},
pages = {{887--892}},
publisher = {{International Union of Crystallography}},
series = {{Journal of Applied Crystallography}},
title = {{Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams}},
url = {{http://dx.doi.org/10.1107/S0021889813004226}},
doi = {{10.1107/S0021889813004226}},
volume = {{46}},
year = {{2013}},
}