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X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire

Dzhigaev, Dmitry; Stankevič, Tomaš; Bi, Zhaoxia LU ; Lazarev, Sergey; Rose, Max; Shabalin, Anatoly; Reinhardt, Juliane; Mikkelsen, Anders LU ; Samuelson, Lars LU and Falkenberg, Gerald, et al. (2017) In ACS Nano 11(7). p.6605-6611
Abstract

The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to... (More)

The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.

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publication status
published
subject
keywords
Bragg ptychography, Finite Element Method, GaN, InGaN, nanowire
in
ACS Nano
volume
11
issue
7
pages
7 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85026311468
  • wos:000406649700008
ISSN
1936-0851
DOI
10.1021/acsnano.6b08122
language
English
LU publication?
yes
id
04c6e11c-e7ed-4eb1-8137-7ed28848f461
date added to LUP
2017-08-31 13:06:03
date last changed
2018-03-04 05:05:12
@article{04c6e11c-e7ed-4eb1-8137-7ed28848f461,
  abstract     = {<p>The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.</p>},
  author       = {Dzhigaev, Dmitry and Stankevič, Tomaš and Bi, Zhaoxia and Lazarev, Sergey and Rose, Max and Shabalin, Anatoly and Reinhardt, Juliane and Mikkelsen, Anders and Samuelson, Lars and Falkenberg, Gerald and Feidenhans'l, Robert and Vartanyants, Ivan A.},
  issn         = {1936-0851},
  keyword      = {Bragg ptychography,Finite Element Method,GaN,InGaN,nanowire},
  language     = {eng},
  month        = {07},
  number       = {7},
  pages        = {6605--6611},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire},
  url          = {http://dx.doi.org/10.1021/acsnano.6b08122},
  volume       = {11},
  year         = {2017},
}