Bulk and surface characterization of In2O3(001) single crystals
(2012) In Physical Review B (Condensed Matter and Materials Physics) 85(11).- Abstract
- A comprehensive bulk and surface investigation of high-quality In2O3(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 +/- 0.5 x 10(5) Omega cm, which translates into a carrier concentration of approximate to 10(12) cm(-3). The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) angstrom from the previously accepted value of 10.117 angstrom. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300... (More)
- A comprehensive bulk and surface investigation of high-quality In2O3(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 +/- 0.5 x 10(5) Omega cm, which translates into a carrier concentration of approximate to 10(12) cm(-3). The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) angstrom from the previously accepted value of 10.117 angstrom. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 degrees C) surface show a step height of 5 angstrom, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 angstrom height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level (E-F). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less. (Less)
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- author
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- 2012
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- Contribution to journal
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- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 85
- issue
- 11
- article number
- 115441
- publisher
- American Physical Society
- external identifiers
-
- wos:000302004000005
- scopus:84859226924
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.85.115441
- language
- English
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- 0661a49c-2915-4a48-9306-8241def3d3a7 (old id 2494798)
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@article{0661a49c-2915-4a48-9306-8241def3d3a7,
abstract = {{A comprehensive bulk and surface investigation of high-quality In2O3(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 +/- 0.5 x 10(5) Omega cm, which translates into a carrier concentration of approximate to 10(12) cm(-3). The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) angstrom from the previously accepted value of 10.117 angstrom. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 degrees C) surface show a step height of 5 angstrom, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 angstrom height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level (E-F). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less.}},
author = {{Hagleitner, Daniel R. and Menhart, Manfred and Jacobson, Peter and Blomberg, Sara and Schulte, Karina and Lundgren, Edvin and Kubicek, Markus and Fleig, Juergen and Kubel, Frank and Puls, Christoph and Limbeck, Andreas and Hutter, Herbert and Boatner, Lynn A. and Schmid, Michael and Diebold, Ulrike}},
issn = {{1098-0121}},
language = {{eng}},
number = {{11}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Bulk and surface characterization of In2O3(001) single crystals}},
url = {{https://lup.lub.lu.se/search/files/3163273/2969444.pdf}},
doi = {{10.1103/PhysRevB.85.115441}},
volume = {{85}},
year = {{2012}},
}