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Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product

Jeddi, Hossein LU ; Witzigmann, Bernd ; Adham, Kristi LU ; Hrachowina, Lukas LU ; Borgström, Magnus T. LU and Pettersson, Håkan LU (2023) In ACS Photonics 10(6). p.1748-1755
Abstract

High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode... (More)

High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ VGS = 1.0 V/VDS = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
gate-all-around contacts, infrared photodetectors, interface traps, nanowire array phototransistors, nanowires, photogating, quantum discs-in-nanowires
in
ACS Photonics
volume
10
issue
6
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85162919445
ISSN
2330-4022
DOI
10.1021/acsphotonics.2c02024
language
English
LU publication?
yes
id
0b8dccd5-3486-48ab-be8e-ab1212f69b59
date added to LUP
2023-09-13 10:42:33
date last changed
2023-11-08 11:23:11
@article{0b8dccd5-3486-48ab-be8e-ab1212f69b59,
  abstract     = {{<p>High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ V<sub>GS</sub> = 1.0 V/V<sub>DS</sub> = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model.</p>}},
  author       = {{Jeddi, Hossein and Witzigmann, Bernd and Adham, Kristi and Hrachowina, Lukas and Borgström, Magnus T. and Pettersson, Håkan}},
  issn         = {{2330-4022}},
  keywords     = {{gate-all-around contacts; infrared photodetectors; interface traps; nanowire array phototransistors; nanowires; photogating; quantum discs-in-nanowires}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{1748--1755}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Photonics}},
  title        = {{Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product}},
  url          = {{http://dx.doi.org/10.1021/acsphotonics.2c02024}},
  doi          = {{10.1021/acsphotonics.2c02024}},
  volume       = {{10}},
  year         = {{2023}},
}