Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
(2023) In ACS Photonics 10(6). p.1748-1755- Abstract
High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode... (More)
High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ VGS = 1.0 V/VDS = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model.
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- author
- Jeddi, Hossein LU ; Witzigmann, Bernd ; Adham, Kristi LU ; Hrachowina, Lukas LU ; Borgström, Magnus T. LU and Pettersson, Håkan LU
- organization
- publishing date
- 2023-06
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- gate-all-around contacts, infrared photodetectors, interface traps, nanowire array phototransistors, nanowires, photogating, quantum discs-in-nanowires
- in
- ACS Photonics
- volume
- 10
- issue
- 6
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85162919445
- ISSN
- 2330-4022
- DOI
- 10.1021/acsphotonics.2c02024
- language
- English
- LU publication?
- yes
- id
- 0b8dccd5-3486-48ab-be8e-ab1212f69b59
- date added to LUP
- 2023-09-13 10:42:33
- date last changed
- 2023-11-08 11:23:11
@article{0b8dccd5-3486-48ab-be8e-ab1212f69b59, abstract = {{<p>High-performance broadband photodetectors offering spectral tunability and a high gain-bandwidth product are crucial in many applications. Here, we report on a detailed experimental and theoretical study of three-terminal phototransistors comprised of three million InP nanowires with 20 embedded InAsP quantum discs in each nanowire. A global, transparent ITO gate all around the nanowires facilitates a radial control of the carrier concentration by more than two orders of magnitude. The transfer characteristics reveal two different transport regimes. In the subthreshold region, the photodetector operates in a diffusion mode with a distinct onset at the bandgap of InP. At larger gate biases, the phototransistor switches to a drift mode with a strong contribution from the InAsP quantum discs. Besides an unexpected spectral tunability, the detector exhibits a state-of-the-art responsivity, reaching around 100 A/W (638 nm/20 μW) @ V<sub>GS</sub> = 1.0 V/V<sub>DS</sub> = 0.5 V with a gain-bandwidth product of around 1 MHz, in excellent agreement with a comprehensive real-device model.</p>}}, author = {{Jeddi, Hossein and Witzigmann, Bernd and Adham, Kristi and Hrachowina, Lukas and Borgström, Magnus T. and Pettersson, Håkan}}, issn = {{2330-4022}}, keywords = {{gate-all-around contacts; infrared photodetectors; interface traps; nanowire array phototransistors; nanowires; photogating; quantum discs-in-nanowires}}, language = {{eng}}, number = {{6}}, pages = {{1748--1755}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Photonics}}, title = {{Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product}}, url = {{http://dx.doi.org/10.1021/acsphotonics.2c02024}}, doi = {{10.1021/acsphotonics.2c02024}}, volume = {{10}}, year = {{2023}}, }