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A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Nilsson, Henrik LU ; Duty, Tim ; Abay, Simon ; Wilson, Chris ; Wagner, Jakob LU ; Thelander, Claes LU ; Delsing, Per and Samuelson, Lars LU (2008) In Nano Letters 8(3). p.872-875
Abstract
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a... (More)
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz. (Less)
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
8
issue
3
pages
872 - 875
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:18302328
  • wos:000253947400019
  • scopus:49749110772
  • pmid:18302328
ISSN
1530-6992
DOI
10.1021/nl0731062
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
7c6a3ea1-6523-477e-a902-4a665fa1d39c (old id 1041464)
date added to LUP
2016-04-01 14:13:08
date last changed
2022-01-27 23:28:49
@article{7c6a3ea1-6523-477e-a902-4a665fa1d39c,
  abstract     = {{We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.}},
  author       = {{Nilsson, Henrik and Duty, Tim and Abay, Simon and Wilson, Chris and Wagner, Jakob and Thelander, Claes and Delsing, Per and Samuelson, Lars}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{872--875}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.}},
  url          = {{http://dx.doi.org/10.1021/nl0731062}},
  doi          = {{10.1021/nl0731062}},
  volume       = {{8}},
  year         = {{2008}},
}