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A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.

Nilsson, Henrik LU ; Duty, Tim; Abay, Simon; Wilson, Chris; Wagner, Jakob LU ; Thelander, Claes LU ; Delsing, Per and Samuelson, Lars LU (2008) In Nano Letters 8(3). p.872-875
Abstract
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a... (More)
We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
8
issue
3
pages
872 - 875
publisher
The American Chemical Society
external identifiers
  • pmid:18302328
  • wos:000253947400019
  • scopus:49749110772
ISSN
1530-6992
DOI
10.1021/nl0731062
language
English
LU publication?
yes
id
7c6a3ea1-6523-477e-a902-4a665fa1d39c (old id 1041464)
date added to LUP
2008-03-25 15:51:06
date last changed
2017-11-12 03:43:57
@article{7c6a3ea1-6523-477e-a902-4a665fa1d39c,
  abstract     = {We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz (-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz (-1/2). At low frequencies this device showed a typical 1/ f noise behavior, with a level extrapolated to 300 microe rms Hz (-1/2) at 10 Hz.},
  author       = {Nilsson, Henrik and Duty, Tim and Abay, Simon and Wilson, Chris and Wagner, Jakob and Thelander, Claes and Delsing, Per and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {3},
  pages        = {872--875},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {A Radio Frequency Single-Electron Transistor Based on an InAs/InP Heterostructure Nanowire.},
  url          = {http://dx.doi.org/10.1021/nl0731062},
  volume       = {8},
  year         = {2008},
}