ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Shiri Babadi, Aein LU ; Lind, Erik LU
and Wernersson, Lars Erik
LU
(2016)
In Applied Physics Letters
108(13).
- Abstract
The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values... (More)
The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm-2 eV-1 and 4 × 1012 cm-2 eV-1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.
(Less)
- author
- Shiri Babadi, Aein
LU
; Lind, Erik
LU
and Wernersson, Lars Erik
LU
- organization
- publishing date
- 2016-03-28
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 108
- issue
- 13
- article number
- 132904
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:84964329817
- wos:000373601400035
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4945430
- language
- English
- LU publication?
- yes
- id
- 10bc76af-caf3-47ce-92ee-b7df47ecca96
- date added to LUP
- 2016-06-23 08:49:26
- date last changed
- 2025-01-26 11:29:36
@article{10bc76af-caf3-47ce-92ee-b7df47ecca96,
abstract = {{<p>The electrical properties of ZrO<sub>2</sub> and HfO<sub>2</sub> gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance-voltage (C-V) measurements exhibit a total trap density profile with a minimum of 1 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup> and 4 × 10<sup>12</sup> cm<sup>-2</sup> eV<sup>-1</sup> for ZrO<sub>2</sub> and HfO<sub>2</sub>, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C-V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.</p>}},
author = {{Shiri Babadi, Aein and Lind, Erik and Wernersson, Lars Erik}},
issn = {{0003-6951}},
language = {{eng}},
month = {{03}},
number = {{13}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{ZrO<sub>2</sub> and HfO<sub>2</sub> dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment}},
url = {{http://dx.doi.org/10.1063/1.4945430}},
doi = {{10.1063/1.4945430}},
volume = {{108}},
year = {{2016}},
}