Aein Shiri Babadi (Former)

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2018
Mark InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Troian, Andrea ^LU ; Knutsson, Johan V. ^LU ; McKibbin, Sarah R. ^LU ; Yngman, Sofie ^LU ; Babadi, Aein S. ^LU ; Wernersson, Lars Erik ^LU ; Mikkelsen, Anders ^LU and Timm, Rainer ^LU (2018) In AIP Advances 8(12).
- Contribution to journal › Article
2017
Mark Impact of doping and diameter on the electrical properties of GaSb nanowires
Babadi, Aein S. ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Applied Physics Letters 110(5).
- Contribution to journal › Article
2016
Mark RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
Wu, Jun ^LU ; Jansson, Kristofer ^LU ; Shiri Babadi, Aein ^LU ; Berg, Martin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Transactions on Electron Devices 63(2). p.584-589
- Contribution to journal › Article
Mark Electrical Characterization of III-V Nanostructure
Shiri Babadi, Aein ^LU (2016)
- Thesis › Doctoral thesis (compilation)
Mark Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
Wu, Jun ^LU ; Babadi, Aein Shiri ^LU ; Jacobsson, Daniel ^LU ; Colvin, Jovana ^LU ; Yngman, Sofie ^LU ; Timm, Rainer ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In Nano Letters 16(4). p.2418-2425
- Contribution to journal › Article
Mark ZrO₂ and HfO₂ dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Shiri Babadi, Aein ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In Applied Physics Letters 108(13).
- Contribution to journal › Article
2014
Mark Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
Shiri Babadi, Aein ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) In Applied Physics Reviews 116(21).
- Contribution to journal › Article