Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric
(2014) In Applied Physics Reviews 116(21).- Abstract
- A qualitative analysis on capacitance-voltage and conductance data for high-kappa/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is... (More)
- A qualitative analysis on capacitance-voltage and conductance data for high-kappa/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary. (C) 2014 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4957525
- author
- Shiri Babadi, Aein LU ; Lind, Erik LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 116
- issue
- 21
- article number
- 214508
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000346007400055
- scopus:84915747334
- ISSN
- 1931-9401
- DOI
- 10.1063/1.4903520
- language
- English
- LU publication?
- yes
- id
- ca0cc1d6-8176-41f9-8b1c-ba1b51b784e7 (old id 4957525)
- date added to LUP
- 2016-04-01 10:04:58
- date last changed
- 2023-08-30 17:06:01
@article{ca0cc1d6-8176-41f9-8b1c-ba1b51b784e7,
abstract = {{A qualitative analysis on capacitance-voltage and conductance data for high-kappa/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary. (C) 2014 AIP Publishing LLC.}},
author = {{Shiri Babadi, Aein and Lind, Erik and Wernersson, Lars-Erik}},
issn = {{1931-9401}},
language = {{eng}},
number = {{21}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Reviews}},
title = {{Modeling of n-InAs metal oxide semiconductor capacitors with high-kappa gate dielectric}},
url = {{http://dx.doi.org/10.1063/1.4903520}},
doi = {{10.1063/1.4903520}},
volume = {{116}},
year = {{2014}},
}