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InAs nanowire metal-oxide-semiconductor capacitors

Roddaro, Stefano LU ; Storm, Kristian LU ; Astromskas, Gvidas LU ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU ; Karlström, Olov LU and Wacker, Andreas LU (2008) In Applied Physics Letters 92(25).
Abstract
We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
92
issue
25
publisher
American Institute of Physics
external identifiers
  • wos:000257231200089
  • scopus:46049100598
ISSN
0003-6951
DOI
10.1063/1.2949080
language
English
LU publication?
yes
id
88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886 (old id 1172780)
date added to LUP
2008-07-14 16:13:27
date last changed
2017-08-13 03:40:08
@article{88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886,
  abstract     = {We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.},
  articleno    = {253509},
  author       = {Roddaro, Stefano and Storm, Kristian and Astromskas, Gvidas and Samuelson, Lars and Wernersson, Lars-Erik and Karlström, Olov and Wacker, Andreas},
  issn         = {0003-6951},
  language     = {eng},
  number       = {25},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {InAs nanowire metal-oxide-semiconductor capacitors},
  url          = {http://dx.doi.org/10.1063/1.2949080},
  volume       = {92},
  year         = {2008},
}