InAs nanowire metal-oxide-semiconductor capacitors
Roddaro, Stefano LU ; Storm, Kristian LU ; Astromskas, Gvidas LU ; Samuelson, Lars LU ; Wernersson, Lars-Erik LU ; Karlström, Olov LU and Wacker, Andreas LU
(2008)
In Applied Physics Letters
92(25).
- Abstract
- We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1172780
- author
- Roddaro, Stefano
LU
; Storm, Kristian
LU
; Astromskas, Gvidas
LU
; Samuelson, Lars
LU
; Wernersson, Lars-Erik
LU
; Karlström, Olov
LU
and Wacker, Andreas
LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 92
- issue
- 25
- article number
- 253509
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000257231200089
- scopus:46049100598
- ISSN
- 0003-6951
- DOI
- 10.1063/1.2949080
- language
- English
- LU publication?
- yes
- id
- 88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886 (old id 1172780)
- date added to LUP
- 2016-04-01 12:11:42
- date last changed
- 2022-01-27 00:16:14
@article{88cf0ba3-2dd2-46ee-ae6a-d003e2ba1886,
abstract = {{We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface.}},
author = {{Roddaro, Stefano and Storm, Kristian and Astromskas, Gvidas and Samuelson, Lars and Wernersson, Lars-Erik and Karlström, Olov and Wacker, Andreas}},
issn = {{0003-6951}},
language = {{eng}},
number = {{25}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{InAs nanowire metal-oxide-semiconductor capacitors}},
url = {{https://lup.lub.lu.se/search/files/2821720/1172793.pdf}},
doi = {{10.1063/1.2949080}},
volume = {{92}},
year = {{2008}},
}