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Drive current and threshold voltage control in vertical InAs wrap-gate transistors

Rehnstedt, Carl LU ; Thelander, Claes LU ; Fröberg, Linus LU ; Ohlsson, B J; Samuelson, Lars LU and Wernersson, Lars-Erik LU (2008) In Electronics Letters 44(3). p.236-237
Abstract
Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
44
issue
3
pages
236 - 237
publisher
IEE
external identifiers
  • wos:000252959700046
  • scopus:38849180498
ISSN
1350-911X
DOI
10.1049/el:20083188
language
English
LU publication?
yes
id
fe53acdc-89cb-452d-b4c0-43ae9c3a07f5 (old id 1198737)
date added to LUP
2008-09-10 16:36:16
date last changed
2017-01-01 05:30:47
@article{fe53acdc-89cb-452d-b4c0-43ae9c3a07f5,
  abstract     = {Results on fabrication and DC-characterisation of vertical InAs nanowire wrap-gate field-effect transistor arrays with a gate length of 50 nm are presented. Each nanowire array was processed into a transistor with a systematic variation in a number of wires and wire diameter over the sample. Extensive studies have been performed on the influence of wire number and diameter on the transistor characteristics due to a high device yield (84%). In particular it is shown that the threshold voltage depends on the wire diameter, with a change in the order of 5 mV/nm. These results show the possibility of changing the transistor characteristics on the sample by altering the wire dimensions, still using only one patterning and growth sequence.},
  author       = {Rehnstedt, Carl and Thelander, Claes and Fröberg, Linus and Ohlsson, B J and Samuelson, Lars and Wernersson, Lars-Erik},
  issn         = {1350-911X},
  language     = {eng},
  number       = {3},
  pages        = {236--237},
  publisher    = {IEE},
  series       = {Electronics Letters},
  title        = {Drive current and threshold voltage control in vertical InAs wrap-gate transistors},
  url          = {http://dx.doi.org/10.1049/el:20083188},
  volume       = {44},
  year         = {2008},
}