Advanced

Electrical properties of self-assembled branched InAs nanowire junctions

Suyatin, Dmitry LU ; Sun, Jie LU ; Fuhrer, Andreas LU ; Wallin, Daniel LU ; Fröberg, Linus LU ; Karlsson, Lisa LU ; Maximov, Ivan LU ; Wallenberg, Reine LU ; Samuelson, Lars LU and Xu, Hongqi LU (2008) In Nano Letters 8(4). p.1100-1104
Abstract
We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at... (More)
We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
8
issue
4
pages
1100 - 1104
publisher
The American Chemical Society
external identifiers
  • wos:000254911200021
  • scopus:51849102279
ISSN
1530-6992
DOI
10.1021/nl073193y
language
English
LU publication?
yes
id
6bf6dfc9-3757-4133-998b-911fbbdb19ba (old id 1206228)
date added to LUP
2008-09-19 11:56:39
date last changed
2017-06-25 04:08:57
@article{6bf6dfc9-3757-4133-998b-911fbbdb19ba,
  abstract     = {We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.},
  author       = {Suyatin, Dmitry and Sun, Jie and Fuhrer, Andreas and Wallin, Daniel and Fröberg, Linus and Karlsson, Lisa and Maximov, Ivan and Wallenberg, Reine and Samuelson, Lars and Xu, Hongqi},
  issn         = {1530-6992},
  language     = {eng},
  number       = {4},
  pages        = {1100--1104},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Electrical properties of self-assembled branched InAs nanowire junctions},
  url          = {http://dx.doi.org/10.1021/nl073193y},
  volume       = {8},
  year         = {2008},
}