Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
(2008) In Nanotechnology 19(43).- Abstract
- The capacitance of arrays of vertical wrapped-gate InAs nanowires is analysed. With the help of a Poisson–Schrödinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance–voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1241526
- author
- Karlström, Olov LU ; Wacker, Andreas LU ; Storm, Kristian LU ; Astromskas, Gvidas LU ; Roddaro, Stefano LU ; Samuelson, Lars LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 19
- issue
- 43
- article number
- 435201
- publisher
- IOP Publishing
- external identifiers
-
- wos:000259486700003
- scopus:56349099360
- pmid:21832684
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/19/43/435201
- language
- English
- LU publication?
- yes
- id
- b23dccb7-5a36-40b1-9c62-8dda0c73446a (old id 1241526)
- date added to LUP
- 2016-04-04 08:09:36
- date last changed
- 2022-01-29 03:05:17
@article{b23dccb7-5a36-40b1-9c62-8dda0c73446a, abstract = {{The capacitance of arrays of vertical wrapped-gate InAs nanowires is analysed. With the help of a Poisson–Schrödinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance–voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material.}}, author = {{Karlström, Olov and Wacker, Andreas and Storm, Kristian and Astromskas, Gvidas and Roddaro, Stefano and Samuelson, Lars and Wernersson, Lars-Erik}}, issn = {{0957-4484}}, language = {{eng}}, number = {{43}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires}}, url = {{http://dx.doi.org/10.1088/0957-4484/19/43/435201}}, doi = {{10.1088/0957-4484/19/43/435201}}, volume = {{19}}, year = {{2008}}, }