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Selective etching of III-V nanowires for molecular junctions

Kallesoe, Christian; Molhave, Kristian; Mårtensson, Thomas LU ; Hansen, Torben Mikael; Samuelson, Lars LU and Boggild, Peter (2008) In Microelectronic Engineering 85(5-6). p.1179-1181
Abstract
Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
molecular junction, III-V, nanowires, selective etching
in
Microelectronic Engineering
volume
85
issue
5-6
pages
1179 - 1181
publisher
Elsevier
external identifiers
  • wos:000257413400110
  • scopus:44149105926
ISSN
1873-5568
DOI
10.1016/j.mee.2007.12.023
language
English
LU publication?
yes
id
5655173f-589b-4b11-bfb6-a7f2f051aa36 (old id 1256978)
date added to LUP
2008-10-15 09:18:37
date last changed
2017-09-24 03:36:40
@article{5655173f-589b-4b11-bfb6-a7f2f051aa36,
  abstract     = {Selective etching of heterostructure III-V nanowires can be used to form tips and narrow gaps simultaneously on multiple nanowires on a single wafer. In this study we tested bromine based etching of gallium arsenide segments in gallium phosphide nanowires. Depending on the etchant and etching conditions, a variety of gap topologies and tip-like structures were observed. The method is compatible with wafer-scale integration of molecular electronics within existing silicon technology, offering control of materials composition, morphology and electronic band gap of the electrodes that can be made so small they might be used as contact electrodes for individual molecules. (C) 2008 Elsevier B.V. All rights reserved.},
  author       = {Kallesoe, Christian and Molhave, Kristian and Mårtensson, Thomas and Hansen, Torben Mikael and Samuelson, Lars and Boggild, Peter},
  issn         = {1873-5568},
  keyword      = {molecular junction,III-V,nanowires,selective etching},
  language     = {eng},
  number       = {5-6},
  pages        = {1179--1181},
  publisher    = {Elsevier},
  series       = {Microelectronic Engineering},
  title        = {Selective etching of III-V nanowires for molecular junctions},
  url          = {http://dx.doi.org/10.1016/j.mee.2007.12.023},
  volume       = {85},
  year         = {2008},
}