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Development of a Vertical Wrap-Gated InAs FET

Thelander, Claes; Rehnstedt, Carl; Froberg, Linus E.; Lind, Erik; Martensson, Thomas; Caroff, Philippe; Lowgren, Truls; Ohlsson, B. Jonas; Samuelson, Lars and Wernersson, Lars-Erik LU (2008) In IEEE Transactions on Electron Devices 55(11). p.3030-3036
Abstract
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire, Field-effect transistor (FET), InAs, wrap gate, surround gate
in
IEEE Transactions on Electron Devices
volume
55
issue
11
pages
3030 - 3036
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000260899000021
  • scopus:56549106697
ISSN
0018-9383
DOI
10.1109/TED.2008.2005151
language
English
LU publication?
yes
id
9ce41a8c-b1a1-4cdb-9ea8-f3239f965297 (old id 1283426)
date added to LUP
2009-02-10 11:39:26
date last changed
2017-10-01 04:20:40
@article{9ce41a8c-b1a1-4cdb-9ea8-f3239f965297,
  abstract     = {In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.},
  author       = {Thelander, Claes and Rehnstedt, Carl and Froberg, Linus E. and Lind, Erik and Martensson, Thomas and Caroff, Philippe and Lowgren, Truls and Ohlsson, B. Jonas and Samuelson, Lars and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  keyword      = {nanowire,Field-effect transistor (FET),InAs,wrap gate,surround gate},
  language     = {eng},
  number       = {11},
  pages        = {3030--3036},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {Development of a Vertical Wrap-Gated InAs FET},
  url          = {http://dx.doi.org/10.1109/TED.2008.2005151},
  volume       = {55},
  year         = {2008},
}