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Development of a Vertical Wrap-Gated InAs FET

Thelander, Claes ; Rehnstedt, Carl ; Froberg, Linus E. ; Lind, Erik ; Martensson, Thomas ; Caroff, Philippe ; Lowgren, Truls ; Ohlsson, B. Jonas ; Samuelson, Lars and Wernersson, Lars-Erik LU (2008) In IEEE Transactions on Electron Devices 55(11). p.3030-3036
Abstract
In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.
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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire, Field-effect transistor (FET), InAs, wrap gate, surround gate
in
IEEE Transactions on Electron Devices
volume
55
issue
11
pages
3030 - 3036
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000260899000021
  • scopus:56549106697
ISSN
0018-9383
DOI
10.1109/TED.2008.2005151
language
English
LU publication?
yes
id
9ce41a8c-b1a1-4cdb-9ea8-f3239f965297 (old id 1283426)
date added to LUP
2016-04-01 14:18:15
date last changed
2022-03-29 20:18:33
@article{9ce41a8c-b1a1-4cdb-9ea8-f3239f965297,
  abstract     = {{In this paper, we report on the development of a vertical wrap-gated field-effect transistor based on epitaxially grown InAs nanowires. We discuss some of the important steps involved in the growth and processing, such as nanowire position control in situ doping, high-kappa dielectric deposition, spacer layer formation: and metal wrap-gate fabrication. In particular, we compare a few alternative methods for deposition of materials onto vertical structures and discuss their potential advantages and limitations. Finally, we also present a comparison of transistor performance for nanowires grown using two different epitaxial techniques.}},
  author       = {{Thelander, Claes and Rehnstedt, Carl and Froberg, Linus E. and Lind, Erik and Martensson, Thomas and Caroff, Philippe and Lowgren, Truls and Ohlsson, B. Jonas and Samuelson, Lars and Wernersson, Lars-Erik}},
  issn         = {{0018-9383}},
  keywords     = {{nanowire; Field-effect transistor (FET); InAs; wrap gate; surround gate}},
  language     = {{eng}},
  number       = {{11}},
  pages        = {{3030--3036}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Development of a Vertical Wrap-Gated InAs FET}},
  url          = {{http://dx.doi.org/10.1109/TED.2008.2005151}},
  doi          = {{10.1109/TED.2008.2005151}},
  volume       = {{55}},
  year         = {{2008}},
}