Single-electron transistors in heterostructure nanowires.
(2003) In Applied Physics Letters 83(10). p.2052-2054- Abstract
- Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/128432
- author
- Thelander, Claes LU ; Mårtensson, Thomas LU ; Björk, Mikael LU ; Ohlsson, B J ; Larsson, Marcus LU ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 83
- issue
- 10
- pages
- 2052 - 2054
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000185089800049
- scopus:0141920578
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1606889
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006), Neuronano Research Center (NRC) (013210020), NanoLund (011012012)
- id
- b01a6230-1c47-4e26-8a97-c3894418cb26 (old id 128432)
- date added to LUP
- 2016-04-01 12:23:24
- date last changed
- 2022-02-03 21:34:18
@article{b01a6230-1c47-4e26-8a97-c3894418cb26, abstract = {{Semiconductor-based single-electron transistors have been fabricated using heterostructure nanowire growth, by introducing a double barrier of InP into InAs nanowires. From electrical measurements, we observe a charging energy of 4 meV for the approximately 55 nm diameter and 100 nm long InAs islands between the InP barriers. The Coulomb blockade can be periodically lifted as a function of gate voltage for all devices, which is a typical signature of single-island transistors. Homogeneous InAs nanowires show no such effect for the corresponding voltage ranges. ©2003 American Institute of Physics.}}, author = {{Thelander, Claes and Mårtensson, Thomas and Björk, Mikael and Ohlsson, B J and Larsson, Marcus and Wallenberg, Reine and Samuelson, Lars}}, issn = {{0003-6951}}, language = {{eng}}, number = {{10}}, pages = {{2052--2054}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Single-electron transistors in heterostructure nanowires.}}, url = {{http://dx.doi.org/10.1063/1.1606889}}, doi = {{10.1063/1.1606889}}, volume = {{83}}, year = {{2003}}, }