Advanced

Controlled polytypic and twin-plane superlattices in iii-v nanowires.

Caroff, Philippe LU ; Dick Thelander, Kimberly LU ; Johansson, Jonas LU ; Messing, Maria LU ; Deppert, Knut LU and Samuelson, Lars LU (2009) In Nature Nanotechnology 4(1). p.50-55
Abstract
Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect... (More)
Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nature Nanotechnology
volume
4
issue
1
pages
50 - 55
publisher
Nature Publishing Group
external identifiers
  • wos:000262638700016
  • pmid:19119283
  • scopus:58149269212
ISSN
1748-3395
DOI
10.1038/nnano.2008.359
language
English
LU publication?
yes
id
648a0bfa-e2d3-4d1b-bb4d-be14f8534223 (old id 1290023)
date added to LUP
2009-02-06 16:36:44
date last changed
2017-12-17 03:19:09
@article{648a0bfa-e2d3-4d1b-bb4d-be14f8534223,
  abstract     = {Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.},
  author       = {Caroff, Philippe and Dick Thelander, Kimberly and Johansson, Jonas and Messing, Maria and Deppert, Knut and Samuelson, Lars},
  issn         = {1748-3395},
  language     = {eng},
  number       = {1},
  pages        = {50--55},
  publisher    = {Nature Publishing Group},
  series       = {Nature Nanotechnology},
  title        = {Controlled polytypic and twin-plane superlattices in iii-v nanowires.},
  url          = {http://dx.doi.org/10.1038/nnano.2008.359},
  volume       = {4},
  year         = {2009},
}