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Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

Lind, Erik LU ; Persson, Martin LU ; Niquet, Yann-Michel and Wernersson, Lars-Erik LU (2009) In IEEE Transactions on Electron Devices 56(2). p.201-205
Abstract
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing... (More)
We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Band structure, field-effect transistor (FET), InAs, nanowire
in
IEEE Transactions on Electron Devices
volume
56
issue
2
pages
201 - 205
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000262816800007
  • scopus:59949097581
ISSN
0018-9383
DOI
10.1109/TED.2008.2010587
language
English
LU publication?
yes
id
96fa597e-c487-4e7d-89d5-0c6df2febef1 (old id 1311479)
date added to LUP
2009-03-17 10:01:12
date last changed
2017-10-29 04:05:35
@article{96fa597e-c487-4e7d-89d5-0c6df2febef1,
  abstract     = {We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.},
  author       = {Lind, Erik and Persson, Martin and Niquet, Yann-Michel and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  keyword      = {Band structure,field-effect transistor (FET),InAs,nanowire},
  language     = {eng},
  number       = {2},
  pages        = {201--205},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs},
  url          = {http://dx.doi.org/10.1109/TED.2008.2010587},
  volume       = {56},
  year         = {2009},
}