Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(2009) In IEEE Transactions on Electron Devices 56(2). p.201-205- Abstract
- We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing... (More)
- We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1311479
- author
- Lind, Erik LU ; Persson, Martin LU ; Niquet, Yann-Michel and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Band structure, field-effect transistor (FET), InAs, nanowire
- in
- IEEE Transactions on Electron Devices
- volume
- 56
- issue
- 2
- pages
- 201 - 205
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000262816800007
- scopus:59949097581
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2008.2010587
- language
- English
- LU publication?
- yes
- id
- 96fa597e-c487-4e7d-89d5-0c6df2febef1 (old id 1311479)
- date added to LUP
- 2016-04-01 14:53:46
- date last changed
- 2024-03-28 00:55:34
@article{96fa597e-c487-4e7d-89d5-0c6df2febef1, abstract = {{We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an Sp(3)d(5)s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances have been calculated with a semianalytical model. It is shown that the InAs nanowire MOSFET with diameters scaled below 15-20 nm can be expected to operate close to the quantum capacitance limit, assuming a high-kappa dielectric thickness of 1-1.5 nm. We have also investigated the evolution of f (t) and the gate delay, both showing improvements as the device is scaled. The very small intrinsic gate capacitance in the quantum limit makes the device susceptible to parasitic capacitances.}}, author = {{Lind, Erik and Persson, Martin and Niquet, Yann-Michel and Wernersson, Lars-Erik}}, issn = {{0018-9383}}, keywords = {{Band structure; field-effect transistor (FET); InAs; nanowire}}, language = {{eng}}, number = {{2}}, pages = {{201--205}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs}}, url = {{http://dx.doi.org/10.1109/TED.2008.2010587}}, doi = {{10.1109/TED.2008.2010587}}, volume = {{56}}, year = {{2009}}, }