Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires
(2009) In Crystal Growth & Design 9(2). p.766-773- Abstract
- We present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal particle seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor phase epitaxy under different conditions: pulsing of the Ga source, and continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth, we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On... (More)
- We present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal particle seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor phase epitaxy under different conditions: pulsing of the Ga source, and continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth, we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite phase forms. We explain the importance of the In background during growth. With classical nucleation modeling we qualitatively relate the density of planar defects in a nanowire to the growth conditions. For low supersaturations, we predict a low twin plane density, consistent with our experimental observations of pulsed nanowire growth. In addition, we suggest that under certain conditions, it might be possible to grow wires with almost perfect wurtzite structure. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1311556
- author
- Johansson, Jonas
LU
; Karlsson, Lisa LU ; Dick Thelander, Kimberly LU ; Bolinsson, Jessica ; Wacaser, Brent LU ; Deppert, Knut LU
and Samuelson, Lars LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Crystal Growth & Design
- volume
- 9
- issue
- 2
- pages
- 766 - 773
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000263048200021
- scopus:61749091911
- ISSN
- 1528-7483
- DOI
- 10.1021/cg800270q
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- b6add32a-fd74-4b2d-bfa6-bbb854575304 (old id 1311556)
- date added to LUP
- 2016-04-01 12:36:52
- date last changed
- 2022-04-21 17:49:36
@article{b6add32a-fd74-4b2d-bfa6-bbb854575304, abstract = {{We present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal particle seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor phase epitaxy under different conditions: pulsing of the Ga source, and continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth, we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite phase forms. We explain the importance of the In background during growth. With classical nucleation modeling we qualitatively relate the density of planar defects in a nanowire to the growth conditions. For low supersaturations, we predict a low twin plane density, consistent with our experimental observations of pulsed nanowire growth. In addition, we suggest that under certain conditions, it might be possible to grow wires with almost perfect wurtzite structure.}}, author = {{Johansson, Jonas and Karlsson, Lisa and Dick Thelander, Kimberly and Bolinsson, Jessica and Wacaser, Brent and Deppert, Knut and Samuelson, Lars}}, issn = {{1528-7483}}, language = {{eng}}, number = {{2}}, pages = {{766--773}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Crystal Growth & Design}}, title = {{Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowires}}, url = {{http://dx.doi.org/10.1021/cg800270q}}, doi = {{10.1021/cg800270q}}, volume = {{9}}, year = {{2009}}, }