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Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires

Johansson, Jonas LU ; Karlsson, Lisa; Dick Thelander, Kimberly LU ; Bolinsson, Jessica; Wacaser, Brent LU ; Deppert, Knut LU and Samuelson, Lars LU (2008) 14th International Conference on Metal Organic Vapor Phase Epitaxy In Journal of Chrystal Growth 310(23). p.5102-5105
Abstract
we present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal-particle-seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor-phase epitaxy under different conditions: pulsing of the Ga source, and Continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the... (More)
we present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal-particle-seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor-phase epitaxy under different conditions: pulsing of the Ga source, and Continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite-phase forms. Our results suggest that it might be possible to predict the conditions necessary for the growth of wires with perfect crystal structure. We interpret our results in terms of the supersaturation during growth. (C) 2008 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Planar defects, Semiconducting III-V materials, Crystal morphology, Metal-organic vapor-phase epitaxy, Nanomaterials
in
Journal of Chrystal Growth
volume
310
issue
23
pages
5102 - 5105
publisher
Elsevier
conference name
14th International Conference on Metal Organic Vapor Phase Epitaxy
external identifiers
  • wos:000262019400095
  • scopus:56249093776
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2008.08.003
language
English
LU publication?
yes
id
8a437a31-e579-43d7-af5b-a89ee129724e (old id 1376202)
date added to LUP
2009-04-17 09:32:46
date last changed
2017-09-24 04:08:05
@inproceedings{8a437a31-e579-43d7-af5b-a89ee129724e,
  abstract     = {we present results that provide fundamental insights on how to experimentally tailor the planar defect density and even the crystal structure in III-V metal-particle-seeded nanowires, where zinc blende is the stable bulk crystal structure. We have grown GaP nanowires with metal-organic vapor-phase epitaxy under different conditions: pulsing of the Ga source, and Continuous growth with and without In background. The dominant crystal structure of the nanowires is zinc blende, which when grown under continuous conditions has a high density of twin planes perpendicular to the growth direction. Using pulsed growth we observed that the twin plane separations were much longer than those observed for continuous growth with an In background. On the other hand, during continuous growth, under In-free conditions, a considerable amount of the wurtzite-phase forms. Our results suggest that it might be possible to predict the conditions necessary for the growth of wires with perfect crystal structure. We interpret our results in terms of the supersaturation during growth. (C) 2008 Elsevier B.V. All rights reserved.},
  author       = {Johansson, Jonas and Karlsson, Lisa and Dick Thelander, Kimberly and Bolinsson, Jessica and Wacaser, Brent and Deppert, Knut and Samuelson, Lars},
  booktitle    = {Journal of Chrystal Growth},
  issn         = {0022-0248},
  keyword      = {Planar defects,Semiconducting III-V materials,Crystal morphology,Metal-organic vapor-phase epitaxy,Nanomaterials},
  language     = {eng},
  number       = {23},
  pages        = {5102--5105},
  publisher    = {Elsevier},
  title        = {Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2008.08.003},
  volume       = {310},
  year         = {2008},
}