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Solid-phase diffusion mechanism for GaAs nanowire growth

Persson, Ann LU ; Larsson, Magnus LU ; Stenström, Stig LU ; Ohlsson, Jonas LU ; Samuelson, Lars LU and Wallenberg, Reine LU (2004) In Nature Materials 3(10). p.677-681
Abstract
Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In... (More)
Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nature Materials
volume
3
issue
10
pages
677 - 681
publisher
Nature Publishing Group
external identifiers
  • wos:000224246200015
  • pmid:15378051
  • scopus:5444245579
ISSN
1476-4660
DOI
10.1038/nmat1220
language
English
LU publication?
yes
id
d56b1a86-f7cd-429d-b928-4f765d098246 (old id 138786)
date added to LUP
2007-06-25 15:06:04
date last changed
2017-10-01 03:44:09
@article{d56b1a86-f7cd-429d-b928-4f765d098246,
  abstract     = {Controllable production of nanometre-sized structures is an important field of research, and synthesis of one-dimensional objects, such as nanowires, is a rapidly expanding area with numerous applications, for example, in electronics, photonics, biology and medicine. Nanoscale electronic devices created inside nanowires, such as p-n junctions(1), were reported ten years ago. More recently, hetero-structure devices with clear quantum-mechanical behaviour have been reported, for example the double-barrier resonant tunnelling diode(2) and the single-electron transistor(3). The generally accepted theory of semiconductor nanowire growth is the vapour-liquid-solid (VLS) growth mechanism(4), based on growth from a liquid metal seed particle. In this letter we suggest the existence of a growth regime quite different from VLS. We show that this new growth regime is based on a solid-phase diffusion mechanism of a single component through a gold seed particle, as shown by in situ heating experiments of GaAs nanowires in a transmission electron microscope, and supported by highly resolved chemical analysis and finite element calculations of the mass transport and composition profiles.},
  author       = {Persson, Ann and Larsson, Magnus and Stenström, Stig and Ohlsson, Jonas and Samuelson, Lars and Wallenberg, Reine},
  issn         = {1476-4660},
  language     = {eng},
  number       = {10},
  pages        = {677--681},
  publisher    = {Nature Publishing Group},
  series       = {Nature Materials},
  title        = {Solid-phase diffusion mechanism for GaAs nanowire growth},
  url          = {http://dx.doi.org/10.1038/nmat1220},
  volume       = {3},
  year         = {2004},
}