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Gated tunnel diode in oscillator applications with high frequency tuning

Wernersson, Lars-Erik LU ; Ärlelid, Mats LU ; Egard, Mikael LU and Lind, Erik LU (2009) In Solid-State Electronics 53(3). p.292-296
Abstract
A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set... (More)
A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set by the tunnel diode and the gate-collector capacitance, and does not depend on the gate-emitter capacitance. This oscillator implementation, in particular, eliminates the need for a separate switch in the realisation of oscillator-based ultra-wide band impulse radios. (C) 2009 Elsevier Ltd. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs, Tunnel diode, Pulse generator, VCO
in
Solid-State Electronics
volume
53
issue
3
pages
292 - 296
publisher
Elsevier
external identifiers
  • wos:000264731300008
  • scopus:61349171843
ISSN
0038-1101
DOI
10.1016/j.sse.2008.12.009
language
English
LU publication?
yes
id
e6540821-12a9-43bb-98a2-f9a6b3282233 (old id 1400830)
date added to LUP
2009-06-12 10:19:03
date last changed
2017-01-01 04:27:07
@article{e6540821-12a9-43bb-98a2-f9a6b3282233,
  abstract     = {A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set by the tunnel diode and the gate-collector capacitance, and does not depend on the gate-emitter capacitance. This oscillator implementation, in particular, eliminates the need for a separate switch in the realisation of oscillator-based ultra-wide band impulse radios. (C) 2009 Elsevier Ltd. All rights reserved.},
  author       = {Wernersson, Lars-Erik and Ärlelid, Mats and Egard, Mikael and Lind, Erik},
  issn         = {0038-1101},
  keyword      = {GaAs,Tunnel diode,Pulse generator,VCO},
  language     = {eng},
  number       = {3},
  pages        = {292--296},
  publisher    = {Elsevier},
  series       = {Solid-State Electronics},
  title        = {Gated tunnel diode in oscillator applications with high frequency tuning},
  url          = {http://dx.doi.org/10.1016/j.sse.2008.12.009},
  volume       = {53},
  year         = {2009},
}