Gated tunnel diode in oscillator applications with high frequency tuning
Wernersson, Lars-Erik LU ; Ärlelid, Mats LU ; Egard, Mikael LU and Lind, Erik LU
(2009)
In Solid-State Electronics
53(3).
p.292-296
- Abstract
- A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set... (More)
- A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set by the tunnel diode and the gate-collector capacitance, and does not depend on the gate-emitter capacitance. This oscillator implementation, in particular, eliminates the need for a separate switch in the realisation of oscillator-based ultra-wide band impulse radios. (C) 2009 Elsevier Ltd. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1400830
- author
- Wernersson, Lars-Erik
LU
; Ärlelid, Mats
LU
; Egard, Mikael
LU
and Lind, Erik
LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaAs, Tunnel diode, Pulse generator, VCO
- in
- Solid-State Electronics
- volume
- 53
- issue
- 3
- pages
- 292 - 296
- publisher
- Elsevier
- external identifiers
-
- wos:000264731300008
- scopus:61349171843
- ISSN
- 0038-1101
- DOI
- 10.1016/j.sse.2008.12.009
- language
- English
- LU publication?
- yes
- id
- e6540821-12a9-43bb-98a2-f9a6b3282233 (old id 1400830)
- date added to LUP
- 2016-04-01 11:41:44
- date last changed
- 2024-01-07 17:00:33
@article{e6540821-12a9-43bb-98a2-f9a6b3282233,
abstract = {{A gated tunnel diode has been introduced into a wave-guide oscillator circuit and the gate is used to tune the oscillation frequency and to turn the oscillator on and off. Oscillators with oscillation frequencies in the range of 9-22 GHz with a typical oscillator output power about -20 dBm have been fabricated. We found that the output power remains essentially constant over a gate bias range (about -260 to 200 mV at V-c = 1.0 V in one oscillator), while it rapidly drops to the noise level over a gate bias range of less than 60 mV above or below the threshold, respectively. In the region with constant power, a total frequency tuning of about 30% is achieved. The maximum oscillation frequency. f(max) (osc), of the gated tunnel diode is set by the tunnel diode and the gate-collector capacitance, and does not depend on the gate-emitter capacitance. This oscillator implementation, in particular, eliminates the need for a separate switch in the realisation of oscillator-based ultra-wide band impulse radios. (C) 2009 Elsevier Ltd. All rights reserved.}},
author = {{Wernersson, Lars-Erik and Ärlelid, Mats and Egard, Mikael and Lind, Erik}},
issn = {{0038-1101}},
keywords = {{GaAs; Tunnel diode; Pulse generator; VCO}},
language = {{eng}},
number = {{3}},
pages = {{292--296}},
publisher = {{Elsevier}},
series = {{Solid-State Electronics}},
title = {{Gated tunnel diode in oscillator applications with high frequency tuning}},
url = {{http://dx.doi.org/10.1016/j.sse.2008.12.009}},
doi = {{10.1016/j.sse.2008.12.009}},
volume = {{53}},
year = {{2009}},
}