Few-electron quantum dots in nanowires
(2004) In Nano Letters 4(9). p.1621-1625- Abstract
- We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control... (More)
- We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control the peak positions. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/140849
- author
- Björk, Mikael LU ; Thelander, Claes LU ; Hansen, Adam LU ; Jensen, Linus E ; Larsson, Magnus LU ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 4
- issue
- 9
- pages
- 1621 - 1625
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000223837200010
- scopus:4644254081
- ISSN
- 1530-6992
- DOI
- 10.1021/nl049230s
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- c289d129-c9be-4bc8-99e4-14cd9c29c08d (old id 140849)
- date added to LUP
- 2016-04-01 17:13:49
- date last changed
- 2022-03-30 21:19:34
@article{c289d129-c9be-4bc8-99e4-14cd9c29c08d,
abstract = {{We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control the peak positions.}},
author = {{Björk, Mikael and Thelander, Claes and Hansen, Adam and Jensen, Linus E and Larsson, Magnus and Wallenberg, Reine and Samuelson, Lars}},
issn = {{1530-6992}},
language = {{eng}},
number = {{9}},
pages = {{1621--1625}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Few-electron quantum dots in nanowires}},
url = {{http://dx.doi.org/10.1021/nl049230s}},
doi = {{10.1021/nl049230s}},
volume = {{4}},
year = {{2004}},
}