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Few-electron quantum dots in nanowires

Björk, Mikael LU ; Thelander, Claes LU ; Hansen, Adam LU ; Jensen, Linus E; Larsson, Magnus LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2004) In Nano Letters 4(9). p.1621-1625
Abstract
We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control... (More)
We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control the peak positions. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
4
issue
9
pages
1621 - 1625
publisher
The American Chemical Society
external identifiers
  • wos:000223837200010
  • scopus:4644254081
ISSN
1530-6992
DOI
10.1021/nl049230s
language
English
LU publication?
yes
id
c289d129-c9be-4bc8-99e4-14cd9c29c08d (old id 140849)
date added to LUP
2007-07-12 16:13:26
date last changed
2017-09-03 04:45:44
@article{c289d129-c9be-4bc8-99e4-14cd9c29c08d,
  abstract     = {We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control the peak positions.},
  author       = {Björk, Mikael and Thelander, Claes and Hansen, Adam and Jensen, Linus E and Larsson, Magnus and Wallenberg, Reine and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  number       = {9},
  pages        = {1621--1625},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Few-electron quantum dots in nanowires},
  url          = {http://dx.doi.org/10.1021/nl049230s},
  volume       = {4},
  year         = {2004},
}