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Defect-free InP nanowires grown in [001] direction on InP(001)

Krishnamachari, U; Borgström, Magnus LU ; Ohlsson, Jonas LU ; Panev, Nikolay LU ; Samuelson, Lars LU ; Seifert, Werner LU ; Larsson, Magnus LU and Wallenberg, Reine LU (2004) In Applied Physics Letters 85(11). p.2077-2079
Abstract
We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas <111>B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
85
issue
11
pages
2077 - 2079
publisher
American Institute of Physics
external identifiers
  • wos:000223923300070
  • scopus:5444234721
ISSN
0003-6951
DOI
10.1063/1.1784548
language
English
LU publication?
yes
id
a293e8c3-7674-4c2b-9bff-b94d44c30967 (old id 140858)
date added to LUP
2007-07-13 13:53:09
date last changed
2017-10-22 03:52:31
@article{a293e8c3-7674-4c2b-9bff-b94d44c30967,
  abstract     = {We report on [001] InP nanowires grown by metalorganic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy reveals wires with nearly square cross sections and a perfect zinc-blende crystalline structure that is free of stacking faults. Photoluminescence measurements of single [001] nanowires exhibit a narrow and intense emission peak at approximately 1.4 eV, whereas &lt;111&gt;B grown reference wires show additional broad luminescence peaks at lower energy. The origin of this uncommon wire growth direction [001] is discussed as a means of controlled formation of [00l]-oriented nanowires on (001) substrates. (C) 2004 American Institute of Physics.},
  author       = {Krishnamachari, U and Borgström, Magnus and Ohlsson, Jonas and Panev, Nikolay and Samuelson, Lars and Seifert, Werner and Larsson, Magnus and Wallenberg, Reine},
  issn         = {0003-6951},
  language     = {eng},
  number       = {11},
  pages        = {2077--2079},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Defect-free InP nanowires grown in [001] direction on InP(001)},
  url          = {http://dx.doi.org/10.1063/1.1784548},
  volume       = {85},
  year         = {2004},
}