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Electron transport in InAs nanowires and heterostructure nanowire devices

Thelander, Claes LU ; Björk, Mikael LU ; Larsson, Magnus LU ; Hansen, Adam LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2004) In Solid State Communications 131(9-10). p.573-579
Abstract
Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (<30nm) are depleted from carriers. Measurements on InAs wires with a quantum point contact configuration indicate a scattering length in the order of 100 nm. Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the... (More)
Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (<30nm) are depleted from carriers. Measurements on InAs wires with a quantum point contact configuration indicate a scattering length in the order of 100 nm. Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states. (C) 2004 Elsevier Ltd. All rights reserved. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
A. Semiconductors, A. Nanostructures, B. Crystal growth, D. Electronic transport
in
Solid State Communications
volume
131
issue
9-10
pages
573 - 579
publisher
Pergamon
external identifiers
  • wos:000223387400004
  • scopus:3242780976
ISSN
1879-2766
DOI
10.1016/j.ssc.2004.05.033
language
English
LU publication?
yes
id
97bd6971-612f-4017-9bee-df4150939bfe (old id 140875)
date added to LUP
2007-07-13 16:29:54
date last changed
2017-10-22 03:48:53
@article{97bd6971-612f-4017-9bee-df4150939bfe,
  abstract     = {Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (&lt;30nm) are depleted from carriers. Measurements on InAs wires with a quantum point contact configuration indicate a scattering length in the order of 100 nm. Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states. (C) 2004 Elsevier Ltd. All rights reserved.},
  author       = {Thelander, Claes and Björk, Mikael and Larsson, Magnus and Hansen, Adam and Wallenberg, Reine and Samuelson, Lars},
  issn         = {1879-2766},
  keyword      = {A. Semiconductors,A. Nanostructures,B. Crystal growth,D. Electronic transport},
  language     = {eng},
  number       = {9-10},
  pages        = {573--579},
  publisher    = {Pergamon},
  series       = {Solid State Communications},
  title        = {Electron transport in InAs nanowires and heterostructure nanowire devices},
  url          = {http://dx.doi.org/10.1016/j.ssc.2004.05.033},
  volume       = {131},
  year         = {2004},
}