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Electron-beam-induced luminescence studies of low-dimensional semiconductor structures

Gustafsson, Anders LU orcid and Samuelson, Lars LU (2024) p.445-530
Abstract
Cathodoluminescence (CL) in the scanning electron microscope (SEM) or the scanning transmission electron microscope (STEM) is a very useful tool for the characterization of low-dimensional semiconductor structures. To obtain spatial resolution, the SEM/STEM provides a highly focused electron beam that can be positioned at specific sites to obtain spot mode spectra. The beam can also be scanned over the sample to record images or to obtain spatially averaged spectra. The normal facilities of the SEM/STEM (e.g., topographical imaging and X-ray analysis) can be used to identify regions of interest as well as to avoid artifacts. Typical artifacts include dust particles or fragments of the substrate lying on the surface, scratches, and cracks... (More)
Cathodoluminescence (CL) in the scanning electron microscope (SEM) or the scanning transmission electron microscope (STEM) is a very useful tool for the characterization of low-dimensional semiconductor structures. To obtain spatial resolution, the SEM/STEM provides a highly focused electron beam that can be positioned at specific sites to obtain spot mode spectra. The beam can also be scanned over the sample to record images or to obtain spatially averaged spectra. The normal facilities of the SEM/STEM (e.g., topographical imaging and X-ray analysis) can be used to identify regions of interest as well as to avoid artifacts. Typical artifacts include dust particles or fragments of the substrate lying on the surface, scratches, and cracks on the surface. The technique has inherently a potential for submicron resolution, depending on the experimental conditions and the sample [1,2]. Such resolution can be applied to large areas, limited primarily by the field of view of the light collection optics, which is typically 100 × 100 μm2. Larger areas can be easily accessed by using the precision positioning system of the SEM/STEM, where the size of the sample is limited by the size of the sample holder. This varies from system to system: In the SEM, generally sample sizes of up to 50 × 50 mm2 can be used, whereas in the STEM, the samples are often limited by the 3 mm diameter of the STEM sample holder. (Less)
Please use this url to cite or link to this publication:
author
and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Microprobe Characterization of Optoelectronic Materials
pages
86 pages
publisher
CRC Press/Balkema
external identifiers
  • scopus:85206232940
ISBN
9781560329411
9781040283820
DOI
10.1201/9781003578673-6
language
English
LU publication?
yes
id
141c2a04-9cf1-43b9-bb6e-98fe8f1a09c8
date added to LUP
2024-11-27 10:00:34
date last changed
2025-07-10 04:41:15
@inbook{141c2a04-9cf1-43b9-bb6e-98fe8f1a09c8,
  abstract     = {{Cathodoluminescence (CL) in the scanning electron microscope (SEM) or the scanning transmission electron microscope (STEM) is a very useful tool for the characterization of low-dimensional semiconductor structures. To obtain spatial resolution, the SEM/STEM provides a highly focused electron beam that can be positioned at specific sites to obtain spot mode spectra. The beam can also be scanned over the sample to record images or to obtain spatially averaged spectra. The normal facilities of the SEM/STEM (e.g., topographical imaging and X-ray analysis) can be used to identify regions of interest as well as to avoid artifacts. Typical artifacts include dust particles or fragments of the substrate lying on the surface, scratches, and cracks on the surface. The technique has inherently a potential for submicron resolution, depending on the experimental conditions and the sample [1,2]. Such resolution can be applied to large areas, limited primarily by the field of view of the light collection optics, which is typically 100 × 100 μm2. Larger areas can be easily accessed by using the precision positioning system of the SEM/STEM, where the size of the sample is limited by the size of the sample holder. This varies from system to system: In the SEM, generally sample sizes of up to 50 × 50 mm2 can be used, whereas in the STEM, the samples are often limited by the 3 mm diameter of the STEM sample holder.}},
  author       = {{Gustafsson, Anders and Samuelson, Lars}},
  booktitle    = {{Microprobe Characterization of Optoelectronic Materials}},
  isbn         = {{9781560329411}},
  language     = {{eng}},
  month        = {{11}},
  pages        = {{445--530}},
  publisher    = {{CRC Press/Balkema}},
  title        = {{Electron-beam-induced luminescence studies of low-dimensional semiconductor structures}},
  url          = {{http://dx.doi.org/10.1201/9781003578673-6}},
  doi          = {{10.1201/9781003578673-6}},
  year         = {{2024}},
}